蒋网,周海,计健,任相璞,朱子岩.易解理氧化镓晶片的半固结研磨工艺[J].表面技术,2022,51(3):178-185, 198.
JIANG Wang,ZHOU Hai,JI Jian,REN Xiang-pu,ZHU Zi-yan.Semi-Consolidated Grinding Process of Easily Cleaved Gallium Oxide Wafer[J].Surface Technology,2022,51(3):178-185, 198 |
| 易解理氧化镓晶片的半固结研磨工艺 |
| Semi-Consolidated Grinding Process of Easily Cleaved Gallium Oxide Wafer |
| 投稿时间：2021-05-08 修订日期：2021-09-07 |
| DOI：10.16490/j.cnki.issn.1001-3660.2022.03.018 |
| 中文关键词: 氧化镓 半固结研磨 研磨加工 单因素试验 正交试验 |
| 英文关键词:gallium oxide semi-consolidated grinding grinding process single factor test orthogonal test |
| 基金项目::国家自然科学基金面上项目(51675457);江苏省普通高校研究生科研创新计划(SJCX21_1521);盐城工学院研究生实践创新计划(SJCX21_XY004) |
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| Author | Institution |
| JIANG Wang | School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China |
| ZHOU Hai | School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China |
| JI Jian | School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China |
| REN Xiang-pu | School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China |
| ZHU Zi-yan | School of Mechanical Engineering, Yancheng Institute of Technology, Yancheng 224051, China |
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| 中文摘要: |
| 目的 为了探究在半固结研磨工艺下的工艺参数对单晶氧化镓(100)晶面材料去除率和表面形貌的影响。方法 通过单因素试验研究研磨垫上磨料的粒度、研磨压力和研磨盘转速等工艺参数对氧化镓晶片材料去除率和表面粗糙度的影响规律，并采用正交试验对工艺参数进行优化。结果 实验结果表明，随着研磨垫上磨料粒度的增大，材料的去除率也逐渐增大，表面粗糙度也逐渐增大;随着研磨压力的增大，材料去除率逐渐增大，表面粗糙度增大的趋势逐渐减缓;随着研磨盘转速的增大，材料去除率逐渐增大，表面粗糙度变化不大。最后通过正交试验优化了工艺参数，得到优化后的最佳工艺组合，研磨垫上磨料的粒度为3 μm，研磨压力为2940 Pa，研磨盘转速为60 r/min，研磨后氧化镓表面粗糙度为26 nm，材料去除率为3.786 nm/min。结论 半固结研磨工艺可以抑制解理现象，并且通过选择合适的半固结研磨工艺参数能够稳定有效地降低表面粗糙度，获得较好的氧化镓表面，并为后续的精密抛光工艺提供了技术依据。 |
| 英文摘要: |
| The work aims to investigate the effect of process parameters on the material removal rate and surface morphology of single crystal gallium oxide (100) in semi-consolidated grinding process. The effect law of grinding process parameters such as abrasive particle size, grinding pressure and grinding disk speed on material removal rate (MRR) and surface roughness (Ra) of gallium oxide wafer was studied by single factor test, and the process parameters were optimized by orthogonal test. According to the test results, the MRR and Ra gradually increased with the increase of abrasive particle size. With the increase of grinding pressure, the MRR increased gradually and the Ra gradually slowed down. With the increase of grinding disk speed, the MRR increased gradually and the Ra had little change. Finally, the process parameters were optimized by orthogonal test. The optimized process combination was as follows:the abrasive particle size on the grinding pad was 3 μm, the grinding pressure was 2940 Pa and the grinding disk speed was 60 r/min. After grinding, the Ra of gallium oxide was 26 nm, and the MRR was 3.786 nm/min. The semi-consolidated grinding process can suppress the cleavage phenomenon, and the surface roughness can be stably and effectively reduced by the appropriate semi-consolidated grinding process parameters, so as to obtain a better surface of gallium oxide, and provide a technical basis for the subsequent precision polishing process. |
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