丁振宇,雷红.锆元素诱导非球形磨粒对氧化锆陶瓷的化学机械抛光性能[J].表面技术,2022,51(2):306-312, 330.
DING Zhen-yu,LEI Hong.Chemical Mechanical Polishing Performance of Non-Spherical Abrasives on Zirconia Ceramics[J].Surface Technology,2022,51(2):306-312, 330
锆元素诱导非球形磨粒对氧化锆陶瓷的化学机械抛光性能
Chemical Mechanical Polishing Performance of Non-Spherical Abrasives on Zirconia Ceramics
投稿时间:2021-04-28  修订日期:2021-08-09
DOI:10.16490/j.cnki.issn.1001-3660.2022.02.030
中文关键词:  非球形二氧化硅  氧化锆陶瓷背板  化学机械抛光  材料去除率  表面粗糙度
英文关键词:non-spherical silica  zirconia ceramic backplate  chemical mechanical polishing  material removal rate  surface roughness
基金项目:国家自然科学基金(51975343)
作者单位
丁振宇 上海大学 理学院 纳米科学与技术研究中心,上海 200444 
雷红 上海大学 理学院 纳米科学与技术研究中心,上海 200444 
AuthorInstitution
DING Zhen-yu Research Center of Nano Science and Technology, College of Sciences, Shanghai University, Shanghai 200444, China 
LEI Hong Research Center of Nano Science and Technology, College of Sciences, Shanghai University, Shanghai 200444, China 
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中文摘要:
      目的 为了提高氧化锆陶瓷手机背板的化学机械抛光(CMP)性能,合成新型非球形二氧化硅磨粒,并分析非球形二氧化硅磨粒在CMP过程中的作用机理。方法 利用Zr4+阳离子对球形二氧化硅纳米颗粒间作用力进行调控,制备Zr4+与SiO2的质量比分别为0、0.025、0.050、0.075、0.100的抛光磨粒;利用纳米粒度电位仪和电子扫描显微镜(SEM)分析抛光液胶体稳定性和磨粒形貌;采用表面粗糙度(Sa)和材料去除率(MRR)来分析磨粒的化学机械抛光性能;利用改装后的摩擦因数仪和X射线光电子能谱仪(XPS)揭示非球形二氧化硅对氧化锆陶瓷的作用机理。结果 在锆元素相对含量(以质量分数计)为0.075%时,得到了分散性良好的非球形二氧化硅磨粒抛光液,相较于球形二氧化硅磨粒抛光液,MRR提升了40.5%,并得到了Sa为1.74 nm的光滑表面;XPS分析结果表明,在抛光过程中二氧化硅磨粒可与氧化锆发生固相化学反应,生成更易去除的ZrSiO4。摩擦因数测量结果表明,非球形二氧化硅磨粒与陶瓷片的摩擦因数从球形磨粒时的0.276提高到0.341。结论 非球形的二氧化硅磨粒在抛光过程中具有更高的摩擦因数和化学机械协同作用,能高效地去除表面粗糙峰,并获得粗糙度为纳米级的平整表面,实现对氧化锆陶瓷手机背板的高效、高精度抛光。
英文摘要:
      The work aims to synthesize new non-spherical silica abrasives and analyze the mechanism of the non-spherical silica abrasives in the polishing process, so as to improve the chemical mechanical polishing performance of the zirconia ceramic backplate of mobile phone. By adjusting the force between spherical silica nano-particles by Zr4+ cations, polishing abrasives with Zr4+ :SiO2 mass ratios of 0, 0.025, 0.050, 0.075, and 0.100 were prepared. Laser particle analyzer and potentiometer and scanning electron microscope (SEM) were used to study the colloidal stability and abrasive grain morphology of polishing slurry. The chemical mechanical polishing performance of abrasives was analyzed from surface roughness (Sa) and material removal rate (MRR). The modified friction coefficient meter and X-ray photoelectron spectroscopy (XPS) were used to reveal the mechanism of the non-spherical silica on zirconia ceramics. The results showed that the well-dispersed non-spherical abrasives silica polishing slurry could be obtained with a relative content of 0.075wt.% of zirconium. Compared with the spherical abrasives silica polishing solution, the MRR of non-spherical silica abrasives was increased by 40.5%, and a smooth surface with Sa of 1.74 nm was obtained. XPS examination showed that silicon dioxide can react with zirconia in a solid phase to produce ZrSiO4, which was easier to be removed during the polishing process. The friction coefficient measurement results showed that the friction coefficient between non-spherical silica abrasives and ceramic wafer was 0.341, which was higher than 0.276 of spherical silica abrasives. The non-spherical silica abrasives can bring a higher coefficient of friction and chemical-mechanical synergy during polishing. It can efficiently remove the surface roughness peaks, obtain a flat surface with nano-level roughness, and realize efficient and high-precision polishing of the zirconia ceramic mobile phone backplane.
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