孙运乾,李薇薇,赵之琳,钱佳.新型高硬度硅溶胶的制备及其在化学机械抛光中的应用[J].表面技术,2021,50(11):383-389.
SUN Yun-qian,LI Wei-wei,ZHAO Zhi-lin,QIAN Jia.Preparation of New High-hardness Silica Sol and Its Application in Chemical Mechanical Polishing[J].Surface Technology,2021,50(11):383-389 |
| 新型高硬度硅溶胶的制备及其在化学机械抛光中的应用 |
| Preparation of New High-hardness Silica Sol and Its Application in Chemical Mechanical Polishing |
| 投稿时间：2020-11-22 修订日期：2021-06-04 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.11.041 |
| 中文关键词: 化学机械平坦化 硅溶胶 活性硅酸 pH值稳定剂 去除速率 表面粗糙度 |
| 英文关键词:CMP silica sol active silicic acid pH stabilizer removal rate surface roughness |
| 基金项目:光电信息控制和安全技术重点实验室基金(614210701041705) |
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| Author | Institution |
| SUN Yun-qian | College of Electronic Information Engineering, Hebei University of Technology, Tianjin 300401, China |
| LI Wei-wei | College of Electronic Information Engineering, Hebei University of Technology, Tianjin 300401, China |
| ZHAO Zhi-lin | College of Electronic Information Engineering, Hebei University of Technology, Tianjin 300401, China |
| QIAN Jia | College of Electronic Information Engineering, Hebei University of Technology, Tianjin 300401, China |
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| 中文摘要: |
| 目的 制造新型高硬度硅溶胶，满足硅晶圆化学机械抛光(CMP)既要高抛光速率，又要高抛光质量的要求。方法 利用恒液面聚合生长法制备硅溶胶的工艺特点，通过在合成过程中加入pH值稳定剂异丙醇胺，提升硅溶胶的硬度和稳定性。采用透射扫描电子显微镜、红外光谱等对硅溶胶的成分、形貌等胶体的性质进行表征和分析。结果 通过设计对比实验，发现新型高硬度硅溶胶抛光时的pH值稳定性较普通市售硅溶胶有很大提升，3组新型高硬度硅溶胶平均抛光速率分别为1.580、1.544、1.582 μm/min，较普通市售硅溶胶分别提升了17.41%、17.91%、18.25%。新型高硬度硅溶胶抛光后，硅晶圆的平均表面粗糙度只有0.157 nm，最低达到了0.132 nm，而市售普通硅溶胶抛光后的硅晶圆平均表面粗糙度为0.216 nm。同时，通过检测抛光前后硅溶胶粒径和形貌的变化，发现新型高硬度硅溶胶均优于普通市售硅溶胶。结论 新型高硬度硅溶胶作为抛光的研磨料在去除速率、表面粗糙度等方面都有一定的优势，验证了新型高硬度硅溶胶作为抛光研磨料的实用价值。 |
| 英文摘要: |
| The paper aims tomanufacture a new type of high-hardness silica sol to meet the requirements of high polishing rate and high polishing quality for chemical mechanical polishing (CMP) of silicon wafers. Based on the process characteristics of preparing the silica sol by the constant liquid level polymerization growth method, the hardness and stability of the silica sol are improved by adding the pH stabilizer isopropanolamine during the synthesis process. The transmission scanning electron microscope, infrared spectroscopy, etc. are used to characterize and analyze the colloidal properties such as the composition and morphology of silica sol. Through designing comparative experiments, it is found that the pH stability of the new high-hardness silica sol during polishing is greatly improved compared with ordinary commercial silica sol. The average polishing rates of the three groups of new high-hardness silica sol are 1.580, 1.544 and 1.582 μm/min respectively, which are increased by 17.41%, 17.91% and 18.25% respectively compared with the average polishing rate of ordinary commercially available silica sol. The average surface roughness of the silicon wafer of the new high-hardness silica sol after polishing is only 0.157 nm, and the lowest is 0.132 nm, while the average surface roughness of the silicon wafer of the commercially available ordinary silica sol after polishing is 0.216 nm. Through the detection of the changes in the particle size and morphology of the silica sol before and after polishing, it is found that the new high-hardness silica sol is better than the common commercial silica sol. The new high-hardness silica sol as a polishing abrasive has certain advantages in terms of removal rate and surface roughness and its practical value of the polishing abrasive is verified. |
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