杨梦熊,惠迎雪.基于硅靶和碳化硅靶的碳化硅薄膜磁控溅射工艺对比[J].表面技术,2021,50(9):134-140.
YANG Meng-xiong,HUI Ying-xue.Comparison of Magnetron Sputtering Process of Silicon Carbide Film Based on Silicon and Silicon Carbide Target[J].Surface Technology,2021,50(9):134-140 |
| 基于硅靶和碳化硅靶的碳化硅薄膜磁控溅射工艺对比 |
| Comparison of Magnetron Sputtering Process of Silicon Carbide Film Based on Silicon and Silicon Carbide Target |
| 投稿时间：2020-10-05 修订日期：2021-03-09 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.09.013 |
| 中文关键词: 磁控溅射 碳化硅 沉积速率 表面粗糙度 反应气体 |
| 英文关键词:magnetron sputtering silicon carbide deposition rate surface roughness reactive gas |
| 基金项目:国家重点研发计划-政府间科技创新合作重点专项(2018YFE0199200);西安市科技创新引导项目(201805031YD9CG15);西安市科技计划项目(201805031YD9cG15(6)) |
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| 中文摘要: |
| 目的 通过基于碳化硅陶瓷靶的直接溅射和基于硅靶与甲烷的反应溅射，在Si(100)基底上沉积碳化硅薄膜，对比两种工艺制备碳化硅薄膜的异同。方法 采用直接磁控溅射与反应磁控溅射工艺制备碳化硅薄膜，通过白光干涉仪、轮廓仪、X光电子能谱仪(XPS)分析薄膜粗糙度、厚度、沉积速率、组分，通过X射线衍射仪和扫描电子显微镜分析薄膜的物相结构和形貌。结果 基于硅靶和甲烷的反应溅射工艺，甲烷流量百分比为20%~70%时，沉积速率从11.3 nm/min升高到36.5 nm/min。甲烷流量百分比为20%~60%时，表面粗糙度Rq值变化不大;甲烷流量百分比为70%时，Rq值有增大的趋势。对于甲烷反应溅射工艺，硅碳元素比例可调，但甲烷气体不易控制。基于碳化硅陶瓷靶工艺，随沉积时间(即膜层沉积厚度)的增加，表面粗糙度Rq变化不大，硅碳原子比接近1 :1。两种工艺制备的薄膜均为晶态，且为8H-SiC。结论 比较两种工艺，相同靶功率下，硅靶反应溅射的沉积速率明显快于碳化硅陶瓷靶。硅靶反应溅射的元素比例可调，但甲烷气体不易控制;碳化硅陶瓷靶的沉积过程稳定，硅碳原子比接近1 :1。 |
| 英文摘要: |
| Through direct magnetron sputtering based on silicon carbide ceramic target and reactive magnetron sputtering based on silicon target and methane, silicon carbide film is deposited on Si(100) substrate. This paper studies and compares the similarities and differences of silicon carbide film prepared by the two processes. Silicon carbide film is produced through direct and reactive magnetron sputtering. The film roughness, thickness, deposition rate, composition are analyzed by white light interferometer, profiler, XPS (X-ray photoelectron spectroscopy), and the phase structure and morphology of the film are analyzed by X-ray diffractometer and scanning electron microscope. The experiment shows that based on the reactive sputtering process of silicon target and methane, the deposition rate increases from 11.3 nm/min to 36.5 nm/min between 20% and 70% methane percentage, and the surface roughness Rq value changes a little between 20% and 60% methane percentage, but there is a tendency to increase at 70%. In the methane reactive sputtering process, the ratio of silicon to carbon is adjustable, but the methane gas is not easy to control; in the silicon carbide ceramic target sputtering process, the surface roughness Rq does not change much with the deposition time or the thickness of the film. The ratio of silicon to carbon is close to 1:1. The films prepared by the two processes are all crystalline and 8H-SiC. Comparing the two processes, the deposition rate of reactive sputtering of silicon target is significantly faster than that of silicon carbide ceramic target under the same target power. For silicon target reactive sputtering, the element ratio is adjustable, but the methane gas is not easy to control. For the silicon carbide ceramic target, the deposition process is stable, and the silicon carbon element ratio is close to 1:1. |
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