李贵鹏,宋贵宏,王楠,李秀宇,胡方.掺Ag的β-Cu2Se薄膜的溅射沉积及热电性能[J].表面技术,2021,50(8):218-226.
LI Gui-peng,SONG Gui-hong,WANG Nan,LI Xiu-yu,HU Fang.Thermoelectric Properties of the β-Cu2Se Films with Ag Doping by Magnetron Sputtering[J].Surface Technology,2021,50(8):218-226 |
| 掺Ag的β-Cu2Se薄膜的溅射沉积及热电性能 |
| Thermoelectric Properties of the β-Cu2Se Films with Ag Doping by Magnetron Sputtering |
| 投稿时间：2020-09-15 修订日期：2021-01-08 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.08.020 |
| 中文关键词: 热电材料 磁控溅射 β-Cu2Se薄膜 Ag掺杂 Seebeck系数 电阻率 |
| 英文关键词:thermoelectric materials magnetron sputtering Cu2Se films Ag doping Seebeck coefficient resistivity |
| 基金项目:国家自然科学基金(51772193) |
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| Author | Institution |
| LI Gui-peng | School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China |
| SONG Gui-hong | School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China |
| WANG Nan | School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China |
| LI Xiu-yu | School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China |
| HU Fang | School of Materials Science and Engineering, Shenyang University of Technology, Shenyang 110870, China |
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| 中文摘要: |
| 目的 研究Ag掺杂对Cu2Se薄膜物相组成以及热电性能的影响。方法 使用粉末烧结的Cu2Se合金靶和高真空磁控溅射设备制备掺Ag的Cu2Se热电薄膜。使用X射线衍射仪(XRD)、扫描电子显微镜(SEM)以及能谱仪(EDS)研究沉积薄膜的物相组成、表面和截面形貌、元素的含量和分布。通过Seebeck系数/电阻分析系统LSR-3测量薄膜的电阻率及Seebeck系数，从而研究不同掺Ag量的Cu2Se薄膜的热电性能。结果 使用磁控溅射技术，利用α-Cu2Se合金靶，可制备出以β-Cu2Se相为主，含极少量α-Cu2Se相的Cu-Se薄膜。薄膜中掺杂的Ag不进入β-Cu2Se相的点阵中，而是在薄膜中形成纳米尺寸的CuAgSe第二相。沉积薄膜的β-Cu2Se相点阵中富含Cu，在Ag含量由0增加到2.97%(原子数分数)的变化过程中，其β-Cu2Se相点阵中[Cu]/[Se]比率大于理想比率2.0，由3.59变化到4.96。β-Cu2Se相点阵中富含Cu，使得沉积的β-Cu2Se薄膜的电阻率低于文献中块体材料。随Ag含量的增加，β-Cu2Se薄膜的电阻率先降低、后升高;对于Seebeck系数，电阻率大的薄膜，其Seebeck系数也大。Ag原子数分数为1.37%的样品，因掺杂后Seebeck系数显著提高，其功率因子最大。结论 使用磁控溅射技术制备的富Cu的β-Cu2Se薄膜，具有低电阻率的优点。掺杂适量的Ag，能够显著提高薄膜的Seebeck系数，从而获得较高的功率因子。 |
| 英文摘要: |
| The work aims to study the influence of Ag doping on the phase composition and thermoelectric properties of Cu2Se thin films. Ag-doped Cu2Se thermoelectric thin films were deposited by high vacuum magnetron sputtering using a powder sintered Cu2Se alloy target. The influence of Ag doping on the phase composition and thermoelectric properties of the Cu2Se thin films were studied in this paper. The phase composition, surface morphologies, fracture cross-sections, micro-area element contents and element distribution of the thin films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). The thermoelectric properties of the Cu2Se films with different Ag contents were studied by measuring the resistivity and Seebeck coefficient by Seebeck coefficient/resistance analysis system LSR-3. The results show that the use of magnetron sputtering technology and α-Cu2Se alloy target can prepare Cu-Se thin films with β-Cu2Se phase as the main phase and a very small amount of α-Cu2Se phase. The Ag atom doped in the films does not enter the lattice of the β-Cu2Se phase, but forms a nano-sized CuAgSe second phase in the films. The β-Cu2Se phase lattice of the deposited films is rich in Cu. When the Ag content increases from 0 to 2.97at%, the ratio of [Cu]/[Se] in the β-Cu2Se phase lattice is more than the ideal ratio of 2.0, enhancing from 3.59 to 4.96.The resistivity of the deposited β-Cu2Se films is significantly lower than that of bulk materials in the literature due to Cu-rich in β-Cu2Se phase lattice. With the increase of Ag content, the resistivity of the deposited β-Cu2Se films decreases first and then increases; the Seebeck coefficient of the films increases with resistivity. The sample with Ag content of 1.37at% has the highest power factor due to the significantly higher Seebeck coefficient. The Cu-rich β-Cu2Se films prepared by magnetron sputtering has low resistivity, and the appropriate amount of Ag-doping can significantly increase the absolute value of the Seebeck coefficient, thereby obtaining a higher power factor. |
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