李洪,李玉婷,林松盛,石倩,郭朝乾,苏一凡,代明江.偏压对四面体非晶碳膜结构和性能的影响[J].表面技术,2021,50(3):284-292.
LI Hong,LI Yu-ting,LIN Song-sheng,SHI Qian,GUO Chao-qian,SU Yi-fan,DAI Ming-jiang.Effect of Bias Voltage on Structure and Properties of Tetrahedral Amorphous Carbon Film[J].Surface Technology,2021,50(3):284-292 |
| 偏压对四面体非晶碳膜结构和性能的影响 |
| Effect of Bias Voltage on Structure and Properties of Tetrahedral Amorphous Carbon Film |
| 投稿时间：2020-06-23 修订日期：2021-02-06 |
| DOI：10.16490/j.cnki.issn.1001-3660.2021.03.030 |
| 中文关键词: 四面体非晶碳膜 偏压 电弧离子镀 结构 性能 |
| 英文关键词:tetrahedral amorphous carbon film bias voltage arc ion plating structure and property |
| 基金项目:广东省重点领域研发计划项目(2020B010185001);广州市重点领域研发计划项目(202007020008);清远市科技计划项目(2019A002);广州市科技计划项目(201904010261);广东省科学院项目(2020GDASYL-20200105004，2018GDASCX-0402，2018GDASCX-0111) |
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| Author | Institution |
| LI Hong | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
| LI Yu-ting | School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China |
| LIN Song-sheng | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
| SHI Qian | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
| GUO Chao-qian | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
| SU Yi-fan | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
| DAI Ming-jiang | The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Institute of New Materials, Guangdong Academy of Sciences, Guangzhou 510651, China |
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| 中文摘要: |
| 目的 通过系统研究电弧离子镀偏压对四面体非晶碳膜(ta-C膜)结构及性能的影响规律，阐明偏压对ta-C膜结构及性能的影响机制，为拓展ta-C膜的应用提供一定的理论依据。方法 改变电弧离子镀偏压工艺，在硬质合金基体表面沉积ta-C单层膜。采用场发射扫描电子显微镜(SEM)表征ta-C膜表面及截面显微形貌，采用Raman光谱和X射线电子能谱(XPS)表征ta-C膜物相结构，利用划痕仪测量ta-C膜结合力，采用应力仪测试ta-C膜残余应力，利用压痕试验及纳米硬度计测量ta-C膜韧性及硬度，采用摩擦磨损试验机测试ta-C膜摩擦磨损性能。结果 随着偏压升高，ta-C膜表面大尺寸碳颗粒数量逐渐增加，小尺寸碳颗粒由于反溅射作用，其数量逐渐减少;ta-C膜硬度、sp3键含量及残余应力先升高后降低，偏压为−180 V时达到最大;ta-C膜与基体结合力先增加后降低，偏压为−140 V时达到最大;耐磨性表现为先升高、后下降的趋势，偏压为−140 V时，磨损率最低，达1.39×10−7 mm3/(N.m)。结论 随着偏压升高，ta-C膜沉积到基体表面入射能量升高，表面大颗粒数量逐渐增多，膜层内残余应力增加，硬度升高，耐磨性增加;但随着偏压的继续升高，膜层表面小尺寸颗粒由于反溅射作用逐渐减少，膜层内石墨化程度增加，ta-C膜耐磨性下降。 |
| 英文摘要: |
| To systematically study the influence of arc ion plating bias on the structure and performance of ta-C film, clarify the mechanism of bias on the structure and performance of ta-C film, and provide a certain theoretical basis for expanding the application of ta-C film. The bias voltage process of arc ion plating was changed to deposit ta-C monolayer on the surface of cemented carbide substrate. Field emission scanning electron microscopy (SEM) was used to characterize the surface and cross-sectional micro-morphology of ta-C film. Raman spectroscopy and X-ray electron energy spectroscopy (XPS) were used to characterize the phase structure of ta-C film. Using a scratch tester to measure the ta-C film binding force, a stress meter to test the residual stress of ta-C film, the indentation test and nano hardness tester to measure the toughness and hardness of ta-C film, and a friction and wear testing machine to test the friction and wear performance of ta-C film. As the bias voltage increased, the number of large-size carbon particles on the surface of the ta-C film gradually increased, and the number of small-sized carbon particles gradually decreased due to reverse sputtering. The hardness of the ta-C film, sp3 bond content and residual stress are now increased and then decreased, the bias voltage is −180 V. As the bias voltage is increased, the binding force of the ta-C film and the substrate first increases and then decreases, and the maximum value is reached when the bias voltage is −140 V. With the increase of bias voltage, the wear resistance first increases and then decreases, when the bias voltage is −140 V, the lowest wear rate is 1.39×10−7 mm3/(N.m). The incident energy of the ta-C film deposited on the substrate surface increases, the number of large particles on the surface gradually increases, the residual stress in the film layer increases, the hardness increases, and the wear resistance increases. As the bias voltage increases due to the reverse sputtering effect, the small-sized particles on the surface of the film layer gradually decrease, the degree of graphitization in the film layer increases, and the wear resistance of the ta-C film decreases. |
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