熊礼威,王凯,李鑫,陶雪华,崔宇.保温时间对二维二硫化钼生长的影响[J].表面技术,2020,49(10):303-308.
XIONG Li-wei,WANG Kai,LI Xin,TAO Xue-hua,CUI Yu.Effect of Holding Time on the Growth of Two-dimensional Molybdenum Disulfide[J].Surface Technology,2020,49(10):303-308 |
| 保温时间对二维二硫化钼生长的影响 |
| Effect of Holding Time on the Growth of Two-dimensional Molybdenum Disulfide |
| 投稿时间：2019-11-07 修订日期：2020-10-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2020.10.035 |
| 中文关键词: 二维材料 MoS2薄片 CVD 生长机理 保温时间 过渡金属硫族化合物 |
| 英文关键词:two-dimensional materials MoS2 flakes CVD growth mechanism holding time transition metal dichalcogenides |
| 基金项目:湖北省大学生创新创业训练计划项目（S201910490026）；武汉工程大学研究生教育创新基金项目（CX2018057）；湖北省教育厅重点项目（D20191503）；武汉工程大学科学研究基金（K201801） |
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| Author | Institution |
| XIONG Li-wei | Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China |
| WANG Kai | Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China |
| LI Xin | Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China |
| TAO Xue-hua | Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China |
| CUI Yu | Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China |
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| 中文摘要: |
| 目的 研究二维MoS2薄片的生长规律，为将来过渡金属硫族化合物薄膜的生长提供理论参考与技术经验。方法 采用化学气相沉积法（CVD）制备MoS2薄片，且仅改变薄片生长的保温时间。通过光学显微镜、扫描电镜（SEM）和拉曼光谱分析探究MoS2薄片的生长规律。结果 MoS2薄片由最初的形核点逐渐生长为中心有亮点的三角形（形核点MoS2拉曼光谱特征峰波数差为20.25 cm-1）进一步生长为完整三角形的MoS2薄片（拉曼光谱特征峰波数差为18.32 cm-1）。随着保温时间的延长，薄片之间开始“拼接”成膜，并最终在此膜层上再次形核生长出体相MoS2薄片。结论 二维MoS2薄片的生长模式随着生长阶段而表现不同，最开始以非二维生长模式产生形核点，而非形核点区域以二维生长模式进行生长。在持续长大阶段，薄片以二维生长的模式为主导。在“拼接”阶段，出现多层MoS2区域。在第二层生长阶段，MoS2薄片以三维生长的模式生长。 |
| 英文摘要: |
| The work aims to study the growth law of two-dimensional MoS2 flakes, and provide theoretical reference and technical experience for the future growth of transition metal chalcogenide films. MoS2 flakes were prepared by chemical vapor deposition (CVD), only the holding time of MoS2 flakes growth was changed. The growth rule of MoS2 flakes was investigated by optical microscopy, scanning electron microscopy (SEM) and Raman spectrum analysis. The results showed that the MoS2 flakes gradually grew from the initial nucleation point to a triangle with bright spots at the center (the wave number difference of Raman spectrum characteristic peak for MoS2 nucleation point was 20.25 cm-1) and further grew into a complete triangular MoS2 flakes (the wave number difference of Raman spectrum characteristic peak was 18.32 cm-1). With the extension of the holding time, filming between the MoS2 flakes began to "splice", and finally nucleated on top of the film to grow bulk MoS2 flakes. The growth pattern of two-dimensional MoS2 flakes varies with the growth stage. The nucleation point is initially generated in a non-two-dimensional growth mode, and the non-nucleation point region is grown in a two-dimensional growth mode. During the continuous growth period, the MoS2 flakes were dominated by the two-dimensional growth pattern. In the "splicing" phase, multiple layers of MoS2 regions have emerged. In the second layer, the MoS2 flakes grow in a three-dimensional growth mode. |
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