张君仪,李晓娜,利助民,毕林霞,郑月红,董闯.半导体Fe-Si非晶薄膜的成分解析及设计[J].表面技术,2020,49(5):39-47.
ZHANG Jun-yi,LI Xiao-na,LI Zhu-min,BI Lin-xia,ZHENG Yue-hong,DONG Chuang.Composition Analysis and Design of Semiconductor Fe-Si Amorphous Thin Film[J].Surface Technology,2020,49(5):39-47 |
| 半导体Fe-Si非晶薄膜的成分解析及设计 |
| Composition Analysis and Design of Semiconductor Fe-Si Amorphous Thin Film |
| 投稿时间：2020-02-09 修订日期：2020-05-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2020.05.005 |
| 中文关键词: Fe-Si非晶薄膜 “团簇+连接原子”模型 β-FeSi2 直接带隙 成分设计 |
| 英文关键词:Fe-Si amorphous thin films "cluster-plus-glue-atom" model β-FeSi2 direct band gap composition design |
| 基金项目:辽宁省基金面上项目（20170540178）；大连理工大学三束材料改性教育部重点实验室开放课题项目（KF1803） |
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| Author | Institution |
| ZHANG Jun-yi | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| LI Xiao-na | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| LI Zhu-min | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| BI Lin-xia | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| ZHENG Yue-hong | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China; 2.State Key Laboratory of Advanced Processing and Recycling of Nonferrous Metals, Lanzhou University of Technology, Lanzhou 730050, China |
| DONG Chuang | 1.Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China |
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| 中文摘要: |
| β-FeSi2作为直接带隙半导体，具有较大的光吸收系数和较高的理论光（热）电转换效率，是一种理想的光（热）电材料。首先综述了目前β-FeSi2材料的研究及应用现状，为了回避单相β-FeSi2制备困难及失配等瓶颈问题，提出了制备具有相似性能的Fe-Si非晶薄膜是有效的解决方法。局域（近程序）结构是决定非晶性能的主要因素，针对非晶薄膜成分、局域结构及性能的对应性研究至关重要。基于此，概述了在“团簇+连接原子”模型指导下，依据实验性能分区和团簇理论解析建立的Fe-Si非晶薄膜成分、局域结构及性能关联；概述了现有晶态和非晶态材料研究中添加元素的原子占位情况，并以此为基础讨论了多组元化对薄膜非晶形成能力及半导体性能的影响。结果证实“团簇+连接原子”模型对Fe-Si非晶薄膜局域结构解析及多组元化成分设计是十分有效的。通过精确成分设计可在较大成分范围内实现薄膜半导体性能可调，为廉价近红外探测和全太阳光谱覆盖提供良好候选材料。最后，展望了Fe-Si非晶薄膜的研究及应用前景。 |
| 英文摘要: |
| As a semiconductor with direct band gap, β-FeSi2 is an ideal photoelectric material due to a large light absorption coefficient and a high theoretical photoelectric and thermoelectric conversion efficiency. The current status and application of β-FeSi2 were summarized firstly. Meanwhile, an effective method was proposed to avoid the bottleneck problem of β-FeSi2 single-phase such as difficult preparation and mismatch, which was the fabrication of Fe-Si amorphous thin films with similar properties of β-FeSi2 single-phase. In addition, local structure (short-range order) was the crucial factor for the properties of amorphous. Therefore, the systematic study on compositions, properties and local structure was important. On the basis of this, the relationship between compositions, properties and local structure of Fe-Si amorphous thin films analyzed and established according to experimental property zoning and cluster theory was illustrated under the guidance of "cluster-plus-glue-atom" model and measured results of properties. Simultaneously, the atomic occupancy of the additive element was revealed in amorphous and crystalline materials, and the influence of multi-component material design on the amorphous forming ability and semiconductor property was carefully discussed. These results indicated that introducing the "cluster-plus-glue-atom" model to explanation of local structure and the multi-component material design in Fe-Si amorphous thin film was an efficient approach. Through exact component design, the semiconductor property of the film can be adjusted in a wide component range, which provided a suitable cheap potential material for near-infrared detection and solar spectrum. Finally, the future research and application trends of Fe-Si amorphous thin film were proposed. |
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