张朝辉,耿旭,李梓万,王智源,鲁智德.化学机械抛光中的接触状态研究概述[J].表面技术,2020,49(3):50-56.
ZHANG Chao-hui,GENG Xu,LI Zi-wan,WANG Zhi-yuan,LU Zhi-de.An Overview of Research on Contact State in Chemical Mechanical Polishing[J].Surface Technology,2020,49(3):50-56 |
| 化学机械抛光中的接触状态研究概述 |
| An Overview of Research on Contact State in Chemical Mechanical Polishing |
| 投稿时间：2019-08-28 修订日期：2020-03-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2020.03.007 |
| 中文关键词: 化学机械抛光 接触状态 平坦化 材料去除 纳米间隙测量 |
| 英文关键词:Chemical mechanical polishing contact state planarization material removal nano gap measurement |
| 基金项目: |
|
|
| Author | Institution |
| ZHANG Chao-hui | School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China |
| GENG Xu | School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China |
| LI Zi-wan | School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China |
| WANG Zhi-yuan | School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China |
| LU Zhi-de | School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China |
|
| 摘要点击次数: |
| 全文下载次数: |
| 中文摘要: |
| 化学机械抛光是获取高表面平整度的有效关键技术，获得了广泛的研究和应用，其表面材料的去除作用依赖于所处的真实接触状态。归纳了抛光垫/晶圆相互作用的形式，即相互滑过而没有直接接触、混合润滑和直接接触。分析了接触状态及其转变过程中的影响因素，包括抛光垫的变形、釉化和磨损，抛光液中磨粒的影响及表面活性剂对钝化层厚度的改变等。重点总结了化学机械抛光中接触状态问题的研究进展，包括光学显微镜测量计算接触面积比、薄膜传感器测量接触面积比、利用双发射激光诱导荧光技术测量抛光液厚度、抛光垫表面形貌演变对材料去除速率的建模等方法的特点及存在的问题。最后提出了纳米间隙测量技术测量化学机械抛光中接触率动态变化，从而得到真实接触状态和接触状态转变规律的新思路。 |
| 英文摘要: |
| Chemical mechanical polishing (CMP) is an effective key technology for obtaining high surface flatness, and has been widely studied and applied. The removal of its surface material depends on the actual contact state it is in. The form of polishing pad/wafer interactions is summarized in the paper, including slipping through each other without direct contact, mixed lubrication, and direct contact. The contact state and its influencing factors are analyzed, including the deformation, glaze and wear of the polishing pad, the influence of abrasive particles in the polishing solution, and the change of the thickness of the passivation layer by the surfactant. The research progress of the contact state in chemical mechanical polishing is summarized, including the calculation of the contact area ratio by optical microscopy, the measurement of the contact area ratio of the thin film sensor, the measurement of the thickness of the polishing solution by the dual emission laser induced fluorescence technique, and modeling of material removal rate by polishing surface morphology evolution. The characteristics of these methods and the problems that exist are pointed out in the article. Finally, a new idea of nanogap measurement technology to measure the dynamic change of contact rate in chemical mechanical polishing to obtain the true contact state and contact state transition law is proposed. |
| 查看全文 查看/发表评论 下载PDF阅读器 |
| 关闭 |
|
|
|
渝公网安备 50010702501715号