李倩,李花,王正铎,张海宝,杨丽珍,刘忠伟,陈强.直流和高功率磁控溅射制备氮化铬薄膜及其结构性能比较[J].表面技术,2019,48(9):64-69.
LI Qian,LI Hua,WANG Zheng-duo,ZHANG Hai-bao,YANG Li-zhen,LIU Zhong-wei,CHEN Qiang.Comparison of Chromium Nitride Thin Films Deposited by Reactive Direct Current Magnetron Sputtering and High Power Pulsed Magnetron Sputtering[J].Surface Technology,2019,48(9):64-69
直流和高功率磁控溅射制备氮化铬薄膜及其结构性能比较
Comparison of Chromium Nitride Thin Films Deposited by Reactive Direct Current Magnetron Sputtering and High Power Pulsed Magnetron Sputtering
投稿时间:2018-12-23  修订日期:2019-09-20
DOI:10.16490/j.cnki.issn.1001-3660.2019.09.005
中文关键词:  氮化铬  直流磁控溅射  高功率磁控溅射  结构  性能  耐磨性  耐腐蚀性
英文关键词:CrN films  DCMS  HiPIMS  microstructure  properties  wear resistance  corrosion resistance
基金项目:国家自然科学基金项目(11775028,11505013,11605012,11875090);北京市自然科学基金项目(4162024);北京市自然科学基金重点项目(KM201510015009);绿色印刷出版技术协同创新项目(20160113)
作者单位
李倩 1.北京印刷学院,北京 102600 
李花 2.北京航空航天大学,北京 100083 
王正铎 1.北京印刷学院,北京 102600 
张海宝 1.北京印刷学院,北京 102600 
杨丽珍 1.北京印刷学院,北京 102600 
刘忠伟 1.北京印刷学院,北京 102600 
陈强 1.北京印刷学院,北京 102600 
AuthorInstitution
LI Qian 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
LI Hua 2.Beihang University, Beijing 100083, China 
WANG Zheng-duo 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
ZHANG Hai-bao 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
YANG Li-zhen 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
LIU Zhong-wei 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
CHEN Qiang 1.Beijing Institute of Graphic Communication, Beijing 102600, China 
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中文摘要:
      目的 比较直流磁控溅射(DCMS)和高功率磁控溅射(HiPIMS)两种沉积技术制备的氮化铬(CrN)薄膜的结构和性能。方法 采用DCMS和HiPIMS沉积技术,在金属镍(Ni)基底上沉积CrN薄膜,采用X射线衍射(XRD)、扫描电镜(SEM)和显微硬度计等仪器,分析CrN薄膜的晶相结构、表面以及截面形貌、基底与薄膜复合硬度、摩擦性能等。结果 XRD晶体测量显示DCMS制备的CrN薄膜在(111)晶面择优生长,内应力大;而HiPIMS制备的CrN薄膜为(200)晶面择优生长,内应力小。SEM显示两种方法制备的CrN薄膜都呈柱状晶体结构生长,但HiPIMS沉积的CrN薄膜颗粒尺寸较小,柱状晶体结构和晶粒更致密。硬度测量得到HiPIMS制备的CrN薄膜显微硬度为855.9HV,而DCMS制备的CrN薄膜显微硬度为501.5HV。此外,DCMS制备的CrN薄膜平均摩擦系数为0.640,而HiPIMS制备的CrN薄膜摩擦系数为0.545,耐磨性也好。HiPIMS制备的CrN薄膜的腐蚀电流比DCMS制备的CrN薄膜低1个数量级。结论 HiPIMS沉积技术制备的CrN薄膜颗粒尺寸小,结构更致密,且缺陷少、硬度高、防腐蚀性好,薄膜各项指标都优于DCMS沉积的CrN薄膜。
英文摘要:
      The work aims to compare the structure and performance of chromium nitride (CrN) thin films deposited by reactive direct current magnetron sputtering (DCMS) and reactive high power pulsed magnetron sputtering (HiPIMS). CrN thin films were deposited on nickel (Ni) substrate by reactive DCMS and HiPIMS. The crystal structure, surface and cross-section morphology, composite hardness and friction properties of CrN thin films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and microhardness tester. From XRD of crystal measurement, CrN films deposited by DCMS grew preferentially in (111) facet and had larger inner stress, while is the films deposited by HiPIMS grew preferentially in (200) facet and had smaller inner stress. The SEM revealed that CrN films prepared by both methods were in columnar crystal structure, but the particle size of films by HiPIMS was smaller and the columnar crystal structure and particle size were denser. The microhardness of CrN films deposited by HiPIMS and DCMS was respectively 855.9HV and 501.5HV. Additionally, the average friction coefficient of CrN films deposited by DCMS and HiPIMS was respectively 0.640 and 0.545, so the wear resistance was good. The corrosion current of the films deposited by HiPIMS was one order of magnitude lower than that of CrN films deposited by DCMS. CrN thin films prepared by HiPIMS have smaller particles, denser structure, less defects, higher hardness and better corrosion, so the performance indicators are superior to that of CrN films prepared by DCMS.
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