孟凡宁,张振宇,郜培丽,孟祥东,刘健.化学机械抛光液的研究进展[J].表面技术,2019,48(7):1-10.
MENG Fan-ning,ZHANG Zhen-yu,GAO Pei-li,MENG Xiang-dong,LIU Jian.Research Progress of Chemical Mechanical Polishing Slurry[J].Surface Technology,2019,48(7):1-10 |
| 化学机械抛光液的研究进展 |
| Research Progress of Chemical Mechanical Polishing Slurry |
| 投稿时间：2019-04-02 修订日期：2019-07-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2019.07.001 |
| 中文关键词: 化学机械抛光 抛光液 磨粒 氧化剂 绿色环保 |
| 英文关键词:chemical mechanical polishing polishing slurry abrasive particle environment-friendly |
| 基金项目:国家优秀青年科学基金（51422502）；国家自然科学基金创新研究群体科学基金（51621064）；教育部首届青年长江学者奖励计划 |
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| Author | Institution |
| MENG Fan-ning | 1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China; 2. Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116024, China |
| ZHANG Zhen-yu | 1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| GAO Pei-li | 1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China; 2. Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116024, China |
| MENG Xiang-dong | 1. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China |
| LIU Jian | 2. Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116024, China |
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| 中文摘要: |
| 化学机械抛光（CMP）技术是集成电路制造中获得全局平坦化的一种重要手段，化学机械抛光液是影响抛光质量和抛光效率的关键因素之一，而抛光液中的磨粒和氧化剂决定了抛光液的各项化学机械抛光性能。将抛光液磨粒分为单一磨粒、混合磨粒以及复合磨粒，综述了近年来国内外化学机械抛光液磨粒发展现状，其中重点分析和总结了SiO2、Al2O3、CeO2三种单一磨粒，SiO2/Al2O3、SiO2/SiO2、SiO2/CeO2混合磨粒，CeO2@SiO2、PS@CeO2、PS@SiO2、sSiO2@mSiO2、PMMA@CeO2、PS@mSiO2等核-壳结构复合磨粒，Co、Cu、Fe、Ce、La、Zn、Mg、Ti、Nd等离子掺杂复合磨粒的研究和应用现状，并针对目前存在的问题进行了详细的分析。针对目前化学机械抛光液不同材料氧化剂（高锰酸钾和过氧化氢）的选择和使用进行了分析总结。此外，介绍了一种新型绿色环保抛光液的研究和使用情况，同时对化学机械抛光液存在的共性问题进行了总结，最后展望了化学机械抛光液未来的研究方向。 |
| 英文摘要: |
| Chemical mechanical polishing (CMP) is an important means to achieve global smoothing in integrated circuit manufacturing. CMP slurry is one of the key factors affecting polishing quality and efficiency, while abrasive particles and oxi-dizers are the key factors determining the performance of CMP slurry. The CMP abrasives were divided into single abrasives, mixed abrasives and composite abrasives. The development status and application of CMP abrasives at local and international levels in recent years were summarized, including three kinds of single abrasives SiO2, Al2O3 and CeO2, mixed abrasives SiO2/ Al2O3, SiO2/SiO2 and SiO2/CeO2, core-shell structure composite particles CeO2@SiO2, PS@CeO2, PS@SiO2, sSiO2@mSiO2, PMMA@CeO2 and PS@mSiO2, and ion-doped composite abrasives Co, Cu, Fe, Ce, La, Zn, Mg, Ti and Nd and the existing problems were also analyzed in detail. The selection and use of KMnO4 and H2O2 oxidizers (KMnO4 and H2O2) for CMP slurry were briefly summarized. In addition, the research and application of a new type of green environmental polishing fluid are in-troduced, the common problems in CMP slurry are summarized and the future research directions of CMP slurry are anticipated. |
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