易铭昆,肖和,魏秋平,邓彪,罗一杰,李亮,马莉,周科朝,张雷.硬质合金气态渗硼预处理及其对金刚石薄膜附着性能的影响[J].表面技术,2019,48(4):122-129.
YI Ming-kun,XIAO He,WEI Qiu-ping,DENG Biao,LUO Yi-jie,LI Liang,MA Li,ZHOU Ke-chao,ZHANG Lei.Gaseous Boronizing Pretreatment of Cemented Carbide and Effects on the Adhesion Performance of Diamond Films[J].Surface Technology,2019,48(4):122-129
硬质合金气态渗硼预处理及其对金刚石薄膜附着性能的影响
Gaseous Boronizing Pretreatment of Cemented Carbide and Effects on the Adhesion Performance of Diamond Films
投稿时间:2019-01-25  修订日期:2019-04-20
DOI:10.16490/j.cnki.issn.1001-3660.2019.04.018
中文关键词:  硬质合金  金刚石薄膜  气态渗硼  膜基结合力  真空管式炉  HFCVD  CoWB
英文关键词:WC-Co  diamond film  gaseous boronizing  film-substrate adhesion  vacuum tube furnace  HFCVD  CoWB
基金项目:国家重点研发计划(2016YFB0301402);粉末冶金国家重点实验室自主课题
作者单位
易铭昆 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
肖和 2.株洲硬质合金集团有限公司,株洲 412000 
魏秋平 1.中南大学 a.粉末冶金国家重点实验室 b.材料科学与工程学院,长沙 410083 
邓彪 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
罗一杰 1.中南大学 b.材料科学与工程学院,长沙 410083 
李亮 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
马莉 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
周科朝 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
张雷 1.中南大学 a.粉末冶金国家重点实验室,长沙 410083 
AuthorInstitution
YI Ming-kun 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
XIAO He 2. Zhuzhou Cemented Carbide Group Corporation, Zhuzhou 412000, China 
WEI Qiu-ping 1.a.State Key Laboratory of Powder Metallurgy, b.School of Materials Science and Engineering, Central South University, Changsha 410083, China 
DENG Biao 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
LUO Yi-jie 1.b.School of Materials Science and Engineering, Central South University, Changsha 410083, China 
LI Liang 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
MA Li 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
ZHOU Ke-chao 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
ZHANG Lei 1.a.State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China 
摘要点击次数:
全文下载次数:
中文摘要:
      目的 保持硬质合金预处理后基体的强度和表面光洁度,并且提升沉积的金刚石薄膜的膜基结合力。方法 使用真空管式炉设备对硬质合金进行真空热处理气态渗硼,然后使用热丝化学气相沉积系统(HFCVD)沉积金刚石薄膜。之后采用X射线衍射仪、扫描电子显微镜(SEM)、能谱分析仪(EDS)、拉曼光谱仪、表面轮廓仪和洛氏压痕测试仪等对样品的结构、形貌和膜基结合性能进行了分析。结果 使用真空热处理气态渗硼法可以在较短时间内完成硬质合金的硼化处理,得到以CoWB相为主的渗硼层,并且具有高温稳定性,表面硬度较未硼化处理的样品提高了15%~20%,最高硬度达到2445HV。相较于酸碱刻蚀二步法预处理,渗硼处理更加有效地改善了膜基结合力,当渗硼温度在1000 ℃时,可以更加有效抑制基体中的Co颗粒向外扩散,制备的金刚石薄膜质量最优,薄膜和基体的结合性能也更加优异。结论 采用真空管式炉进行的热处理气态渗硼预处理法可以简单高效地实现对硬质合金的硼化处理,重复性好,并且可大批量处理,处理后沉积的金刚石薄膜有良好的膜基结合力。
英文摘要:
      The work aims to maintain the strength and surface finish of the cemented carbide after pretreatment and enhance the adhesion of the deposited diamond film. Vacuum heat treatment gaseous boronizing was proposed to the WC-Co by vacuum tube furnace. Then, the diamond films were deposited by hot filament chemical vapor deposition (HFCVD). The structure, morphology and film-substrate adhesion strength of the samples were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy, surface profiler and Rockwell indentation test. The boronization treatment of cemented carbide could be completed in a short time by vacuum heat treatment gaseous boronizing method to obtain a boride layer mainly composed of CoWB phase and with high temperature stability. The surface hardness was increased by 15%~20% compared with the samples without boronization treatment, and the maximum hardness was 2445HV. Compared with the two-step pretreatment of acid and alkali etching, the boronizing treatment was better to improve the film-substrate adhesion. When the boronizing temperature was 1000 ℃, the outward diffusion of Co particles from the internal substrate could be more effectively inhibited, the quality of the deposited diamond films was the best, and the film-substrate ad-hesion property was also more outstanding. The heat treatment gaseous boronizing provides a simple and efficient mean to pretreat the WC-Co, which has good repeatability and can be used for mass processing. The deposited diamond films after pretreatment have good film substrate adhesion.
查看全文  查看/发表评论  下载PDF阅读器
关闭

关于我们 | 联系我们 | 投诉建议 | 隐私保护 | 用户协议

您是第19940640位访问者    渝ICP备15012534号-3

版权所有:《表面技术》编辑部 2014 surface-techj.com, All Rights Reserved

邮编:400039 电话:023-68792193传真:023-68792396 Email: bmjs@surface-techj.com

渝公网安备 50010702501715号