严艳芹,邱长军,胡良斌,黄鹤,刘艳红,李怀林.添加SnAl元素与中温烧结对Cr/Zr膜基界面结合强度的影响[J].表面技术,2018,47(12):277-283.
YAN Yan-qin,QIU Chang-jun,HU Liang-bin,HUANG He,LIU Yan-hong,LI Huai-lin.Effect of SnAl and Intermediate-temperature Sintering on Interfacial Bonding Strength of Cr/Zr Film[J].Surface Technology,2018,47(12):277-283 |
| 添加SnAl元素与中温烧结对Cr/Zr膜基界面结合强度的影响 |
| Effect of SnAl and Intermediate-temperature Sintering on Interfacial Bonding Strength of Cr/Zr Film |
| 投稿时间：2018-05-14 修订日期：2018-12-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2018.12.037 |
| 中文关键词: 磁控溅射 CrSnAl合金膜层 中温烧结 膜层韧性 结合强度 |
| 英文关键词:magnetron sputtering CrSnAl films medium temperature sintering film toughness bonding strength |
| 基金项目:国家科技重大专项（2015ZX06004001-002）；湖南省重点学科建设（湘教发[2011]76）；湖南省高校重点实验室基金（湘教发[2014]85） |
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| Author | Institution |
| YAN Yan-qin | 1.School of Mechanical Engineering, University of South China, Hengyang 421001, China |
| QIU Chang-jun | 1.School of Mechanical Engineering, University of South China, Hengyang 421001, China |
| HU Liang-bin | 1.School of Mechanical Engineering, University of South China, Hengyang 421001, China |
| HUANG He | 1.School of Mechanical Engineering, University of South China, Hengyang 421001, China |
| LIU Yan-hong | 2.State Power Investment Corporation Central Research Institute, Beijing 102209, China |
| LI Huai-lin | 2.State Power Investment Corporation Central Research Institute, Beijing 102209, China |
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| 中文摘要: |
| 目的 通过在Cr膜中添加SnAl元素及中温液相烧结，提高锆合金膜基界面结合强度。方法 在Cr靶中添加SnAl元素，制备一种均匀分布的CrSnAl合金靶材（原子比Cr:Sn:Al=95:4:1），并利用直流磁控溅射（DCMS）技术在锆合金表面制备约5 μm厚的CrSnAl膜层，再将CrSnAl膜层试样放入Ar保护气氛炉中进行中温烧结（温度为600 ℃，时间为30 min），随炉冷却至室温。利用XRD、SEM、EDS及体式显微镜分析中温烧结对CrSnAl膜层形貌、组织结构及元素扩散的影响；根据涂层弯曲断裂形貌、切削划痕力和切屑形貌综合评价膜基界面结合强度。结果 添加SnAl后，Cr膜层表面孔隙等缺陷明显减少，膜基界面结合强度得到较大提升，从41.7 MPa提升到了45.8 MPa。600 ℃烧结后，CrSnAl膜层韧性增强，并出现韧窝形貌，剪切唇仅为烧结前CrSnAl膜层的1/2，CrSnAl/Zr界面结合强度进一步提升到52.1 MPa。结论 Cr膜中添加SnAl有利于膜基界面元素扩散，对膜基界面结合强度提高有较大影响；中温烧结CrSnAl膜层韧性及膜基界面结合强度均有较大提升，进而改善了膜基界面结合性能。 |
| 英文摘要: |
| The work aims to increase the bonding strength of zirconium alloy film-based interface by SnAl elements in Cr film and intermediate-temperature liquid phase sintering. SnAl element was added to Cr target to prepare a CrSnAl alloy target with an evenly distributed atomic ratio of Cr∶Sn∶Al=95∶4∶1. DC magnetron sputtering (DCMS) technology was used to prepare approximately 5 μm thick CrSnAl film on the surface of zirconium alloy and then the CrSnAl film sample was placed in an Ar atmosphere furnace for sintering at an intermediate temperature of 600 ℃ for 30 minutes and the coated sample was cooled down to room temperature with the furnace. Effect of intermediate-temperature sintering on morphology, structure and element diffusion of CrSnAl films was investigated by XRD, SEM, EDS and stereoscopic microscope, respectively and the film-based interface bonding strength was evaluated by coating bending fracture morphology, cutting scratch force and chip morphology. The defects such as pores on the surface of Cr film with SnAl addition were significantly reduced, and the bond strength at the interface of the film was greatly improved. The average bonding strength at the interface was increased from 41.7 MPa to 45.8 MPa. The toughness of the CrSnAl film after sintered at 600 ℃ was enhanced, and the dimple appearance was observed. The shear lip was only 1/2 of the pre-sintered CrSnAl film, and the CrSnAl/Zr interface bond strength was further increased to 52.1 MPa. Therefore, the addition of SnAl to the Cr film is beneficial to the diffusion of element at the interface of the film, and has a great influence on the bonding strength of the film-based interface. CrSnAl film sintered at medium temperature increases the toughness of the film and the bonding strength of the film-based interface, thus improving the interface properties of the film-based interface. |
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