艾猛,李刘合,韩明月,苗虎.高功率脉冲磁控溅射等离子体放电特性研究现状[J].表面技术,2018,47(9):176-186.
AI Meng,LI Liu-he,HAN Ming-yue,MIAO Hu.Discharge Characteristics of Plasma Made by High Power Pulse Magnetron Sputtering[J].Surface Technology,2018,47(9):176-186
高功率脉冲磁控溅射等离子体放电特性研究现状
Discharge Characteristics of Plasma Made by High Power Pulse Magnetron Sputtering
投稿时间:2018-05-01  修订日期:2018-09-20
DOI:10.16490/j.cnki.issn.1001-3660.2018.09.023
中文关键词:  高功率脉冲磁控溅射  放电特性  靶电流  自溅射  气体循环  二次电子  气体稀薄效应  焦耳加热效应
英文关键词:discharge characteristic  target current  self-sputterring  gas cycle  secondary electron  gas rarefaction effect  Joule heating effect
基金项目:
作者单位
艾猛 北京航空航天大学,北京 100191 
李刘合 北京航空航天大学,北京 100191 
韩明月 北京航空航天大学,北京 100191 
苗虎 北京航空航天大学,北京 100191 
AuthorInstitution
AI Meng Beihang University, Beijing 100191, China 
LI Liu-he Beihang University, Beijing 100191, China 
HAN Ming-yue Beihang University, Beijing 100191, China 
MIAO Hu Beihang University, Beijing 100191, China 
摘要点击次数:
全文下载次数:
中文摘要:
      高功率脉冲磁控溅射(HiPIMS)因其较高的靶材原子离化率和优异的薄膜成形性能,逐渐成为PVD领域的热点镀膜技术。靶材原子的高度离化宏观表现为较大的放电电流。介绍了等离子体放电靶电流的构成及其形成原理,分析了HiPIMS放电过程中磁场、靶电压、工作气压对靶材原子离化率的影响,及其相应放电靶电流曲线。空间磁场可以束缚电子,增长靶前电子运动轨迹,同增大工作气压一样,都可以减小粒子运动平均自由程,增大粒子碰撞几率,提高原子离化率,增大放电靶电流。升高靶电压可以提高离子碰撞能量,靶电压越高,放电靶电流越大。分析了各种靶材在不同电压下的放电靶电流曲线。优异的薄膜成形性能得益于对离子运动的良好控制,阐述了等离子体空间电荷分布状况、靶材自溅射和“气体循环”过程、二次电子发射及其促进离化机制、等离子体碰撞引起的气体稀薄现象,以及预鞘层对二次电子和等离子体电子的焦耳加热效应等微观机理,论述了这些微观机理对粒子离化的作用效果。最后展望了研究HiPIMS等离子体放电特性可能的研究方向。
英文摘要:
      High power pulse magnetron sputtering (HiPIMS) has become a hot spot in the field of PVD due to its high ionization rate of target atoms and excellent film forming property. Macroscopic expression of high ionization rate of target atoms is large discharge current. The work aims to introduce structure and forming principle of plasma discharge target current, analyze the influences of magnetic field, target voltage and working pressure on atomic ionization rate of target material during HiPIMS discharge, and investigate corresponding discharge target current curve. Space magnetic fields could bind electrons and increase trajectory of electrons in front of the target. Increasing magnetic fields or working pressure could reduce mean free path of particle motion, further increase probability of particle collision and atomic ionization rate, and hence increase discharge target current. Increasing the target voltage could increase ion collision energy. The higher the target voltage was, the greater the discharge target current was. The discharge target current curves of various materials at different voltage were analyzed. The excellent film forming property benefitted from good control of ionic motion. The work described a series of microscopic mechanisms including spatial charge distribution of plasma, target self-sputtering and “gas cycle” process, mechanism of secondary electron emission and its ionization promotion, phenomenon of gas rarefaction caused by plasma collision, and Joule heating effect of presheath on secondary electrons and plasma electrons. The contribution of these microscopic mechanisms to ionization of particles was discussed. Finally, potential research direction of HiPIMS plasma discharge was prospected.
查看全文  查看/发表评论  下载PDF阅读器
关闭

关于我们 | 联系我们 | 投诉建议 | 隐私保护 | 用户协议

您是第20634309位访问者    渝ICP备15012534号-3

版权所有:《表面技术》编辑部 2014 surface-techj.com, All Rights Reserved

邮编:400039 电话:023-68792193传真:023-68792396 Email: bmjs@surface-techj.com

渝公网安备 50010702501715号