陈大军,李忠盛,吴护林,陈汉宾,丛大龙,何庆兵.电弧离子沉积钽膜及微结构研究[J].表面技术,2018,47(7):246-251.
CHEN Da-jun,LI Zhong-sheng,WU Hu-lin,CHEN Han-bin,CONG Da-long,HE Qing-bing.Growth and Microstructure of Tantalum Film Deposited by Arc Ion Plating Method[J].Surface Technology,2018,47(7):246-251 |
| 电弧离子沉积钽膜及微结构研究 |
| Growth and Microstructure of Tantalum Film Deposited by Arc Ion Plating Method |
| 投稿时间：2018-02-11 修订日期：2018-07-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2018.07.037 |
| 中文关键词: 电弧离子沉积 钽膜 物相组成 沉积速率 膜层形貌 生长机理 |
| 英文关键词:arc ion plating method Tantalum film phase composition deposition rate film morphology growth mechanism |
| 基金项目: |
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| Author | Institution |
| CHEN Da-jun | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
| LI Zhong-sheng | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
| WU Hu-lin | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
| CHEN Han-bin | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
| CONG Da-long | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
| HE Qing-bing | Southwest Institute of Technique and Engineering, Chongqing 400039, China |
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| 中文摘要: |
| 目的 研究电弧离子沉积钽膜的沉积工艺及微观结构，分析钽膜生长机理。方法 采用电弧离子沉积法在石墨基体上沉积钽膜，研究了沉积工艺（如弧电流、负偏压等参数）对钽膜的物相组成、沉积速率、表面形貌的影响。结果 电弧离子沉积钽膜的物相由α-Ta相和极少量β-Ta相组成。弧电流、负偏压、靶间距等沉积参数对钽膜厚度、沉积速率和膜-基结合力的影响很大，在弧电流为220 A、负偏压为300 V、靶间距为200 mm时，钽膜沉积速率为0.1 µm/min，沉积速率适宜，膜-基结合力达到69 N，结合力高。钽膜厚度均匀，在靠近基体侧形成了晶粒细小、组织致密的过渡层，厚度约0.6~0.9 µm，其余为细小柱状晶结构。钽膜表面颗粒尺寸随负偏压的升高而减小，负偏压为300 V时，颗粒尺寸细小均匀（仅3~5 µm），钽膜表面无细小孔隙和裂纹。结论 电弧离子沉积法可以在石墨基体上沉积出组织致密、厚度均匀且膜-基结合力高的钽膜。沉积初期主要通过沉积、移动、扩散等过程形成稳定核，随着沉积时间的延长，稳定核逐渐长大成岛，并在三维方向以岛状生长形成连续膜，为典型岛状生长模式。 |
| 英文摘要: |
| The work aims to study deposition technology and microstructure of Tantalum film deposited by arc ion plating method and to analyze the growth mechanism of Tantalum film. The Tantalum film on the surface of graphite substrate was deposited by arc ion plating method. The influences of deposition parameters such as arc current, negative bias etc. on the phase composition, deposition rate and surface morphology of Tantalum film were studied. From the results, the Tantalum film was composed of α-Ta and a small amount of β-Ta; The deposition parameters such as arc current, negative bias, target-substrate distance seriously affected thickness, deposition rate and film-substrate cohesion of Tantalum film. The deposition rate was suitable (0.1 µm/min) and the film-substrate cohesion reached the highest (69 N) when the arc current was 220 A, the negative bias was 300 V and the target-substrate distance was 200 mm; The thickness of Tantalum film was uniform and the fine grain and dense structure of transition layer of 0.6~0.9 µm could be obtained near graphite substrate. The rest part of Tantalum film was fine columnar crystals. The surface particle sizes of Tantalum film decreased as the negative bias increased. The particle size was fine and uniform (3~5 µm) when the negative bias was 300 V; and the surface of Tantalum film was free from small pore and crack. The high-quality Tantalum film with dense structure, uniform thickness and high film-substrate cohesion can be deposited on graphite substrate by arc ion plating method. At the beginning of deposition, the stable nucleus can be formed through deposition, movement and diffusion etc. With the increase of deposition time, the stable nucleus grows to form islands, and the islands grow to form a continuous film in three-dimensional direction. The Tantalum film deposited by arc ion plating method is the typical island growth pattern. |
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