王丹,汪为磊,秦飞,刘卫丽,施利毅,宋志棠.钴掺杂硅溶胶的制备及其在A向蓝宝石抛光中的应用[J].表面技术,2017,46(8):259-267.
WANG Dan,WANG Wei-lei,QIN Fei,LIU Wei-li,SHI Li-yi,SONG Zhi-tang.Preparation of Co-doped Silica Sol and Its Application in Sapphire (1120) Polishing[J].Surface Technology,2017,46(8):259-267 |
| 钴掺杂硅溶胶的制备及其在A向蓝宝石抛光中的应用 |
| Preparation of Co-doped Silica Sol and Its Application in Sapphire (1120) Polishing |
| 投稿时间：2017-03-01 修订日期：2017-08-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.08.042 |
| 中文关键词: 非球形硅溶胶 钴 化学机械抛光 蓝宝石 摩擦系数 X射线光电子能谱 |
| 英文关键词:non-spherical silica sol cobalt chemical mechanical polishing sapphire COF XPS |
| 基金项目:国家自然科学基金（51205387），上海市优秀技术带头人项目(14XD1425300，14DZ2294900) |
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| Author | Institution |
| WANG Dan | 1. a.School of Science, Shanghai University, Shanghai 200444, China;2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
| WANG Wei-lei | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
| QIN Fei | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
| LIU Wei-li | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
| SHI Li-yi | b.Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444, China |
| SONG Zhi-tang | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| 中文摘要: |
| 目的 提高A向蓝宝石抛光速率。方法 分别采用诱导法和种子法制备了非球形和球形钴掺杂硅溶胶，并应用于A向蓝宝石的化学机械抛光。采用扫描电子显微镜（SEM）、电感偶合等离子体发射光谱仪（ICP）和X射线光电子能谱（XPS）检测产物颗粒的粒径及其分布、形貌、元素组成及存在状态等，采用CP-4抛光机对抛光速率进行验证，并用原子力显微镜测试抛光后的材料表面粗糙度，根据抛光后产物的XPS测试结果对抛光过程中的化学反应进行分析。结果 与纯硅溶胶相比，非球形钴掺杂硅溶胶抛光速率提高了37%，且表面粗糙度相近，而球形钴掺杂硅溶胶抛光速率却无明显优势。XPS结果显示，目前没有证据表明Co元素参与了化学反应。结论 非球形钴掺杂硅溶胶在A向蓝宝石抛光中起到了积极作用，归因于其形状优势而非Al2O3与Co之间的化学反应。 |
| 英文摘要: |
| The work aims to improve polishing rate of A-plane sapphire (1120). Non-spherical and spherical Co-doped silica sol was prepared in induction method and seed induction method, respectively. The two products were applied in chemical mechanical polishing (CMP) of A-plane sapphire. Grain size, morphology, element composition and existential state of product particles were detected with scanning electron microscope (SEM), inductive coupled plasma (ICP) and X-ray photoelectron spectroscopy (XPS). Polishing rate was verified with CP-4 polisher. Surface roughness of polished materials was tested with atomic force microscope. Chemical reaction during polishing process was analyzed based upon XPS test results of polished products. Compared with pure silica sol, non-spherical Co-doped silica sol gave 37% higher polishing rate and similar surface roughness, while spherical Co-doped silica sol had no clear advantage in polishing rate, no evidence showed that Co element was involved in chemical reaction according to XPS results. The positive role of non-spherical Co-doped silica sol in A-plane sapphire polishing is attributed to its shape priority, but not chemical reaction between Al2O3 and Co. |
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