王丹,汪为磊,秦飞,刘卫丽,施利毅,宋志棠.钴掺杂硅溶胶的制备及其在A向蓝宝石抛光中的应用[J].表面技术,2017,46(8):259-267
钴掺杂硅溶胶的制备及其在A向蓝宝石抛光中的应用
Preparation of Co-doped Silica Sol and Its Application in Sapphire (1120) Polishing
投稿时间:2017-03-01  修订日期:2017-08-20
DOI:10.16490/j.cnki.issn.1001-3660.2017.08.042
中文关键词:  非球形硅溶胶    化学机械抛光  蓝宝石  摩擦系数  X射线光电子能谱
英文关键词:non-spherical silica sol  cobalt  chemical mechanical polishing  sapphire  COF  XPS
基金项目:国家自然科学基金(51205387),上海市优秀技术带头人项目(14XD1425300,14DZ2294900)
作者单位
王丹 1.上海大学 a.理学院,上海 200444;2.中国科学院上海微系统与信息技术研究所,上海 200050 
汪为磊 中国科学院上海微系统与信息技术研究所,上海 200050 
秦飞 中国科学院上海微系统与信息技术研究所,上海 200050 
刘卫丽 中国科学院上海微系统与信息技术研究所,上海 200050 
施利毅 b.纳米科学与技术研究中心,上海 200444 
宋志棠 中国科学院上海微系统与信息技术研究所,上海 200050 
AuthorInstitution
WANG Dan 1. a.School of Science, Shanghai University, Shanghai 200444, China;2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
WANG Wei-lei Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
QIN Fei Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
LIU Wei-li Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
SHI Li-yi b.Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444, China 
SONG Zhi-tang Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 
摘要点击次数: 123
全文下载次数: 54
中文摘要:
      目的 提高A向蓝宝石抛光速率。方法 分别采用诱导法和种子法制备了非球形和球形钴掺杂硅溶胶,并应用于A向蓝宝石的化学机械抛光。采用扫描电子显微镜(SEM)、电感偶合等离子体发射光谱仪(ICP)和X射线光电子能谱(XPS)检测产物颗粒的粒径及其分布、形貌、元素组成及存在状态等,采用CP-4抛光机对抛光速率进行验证,并用原子力显微镜测试抛光后的材料表面粗糙度,根据抛光后产物的XPS测试结果对抛光过程中的化学反应进行分析。结果 与纯硅溶胶相比,非球形钴掺杂硅溶胶抛光速率提高了37%,且表面粗糙度相近,而球形钴掺杂硅溶胶抛光速率却无明显优势。XPS结果显示,目前没有证据表明Co元素参与了化学反应。结论 非球形钴掺杂硅溶胶在A向蓝宝石抛光中起到了积极作用,归因于其形状优势而非Al2O3与Co之间的化学反应。
英文摘要:
      The work aims to improve polishing rate of A-plane sapphire (1120). Non-spherical and spherical Co-doped silica sol was prepared in induction method and seed induction method, respectively. The two products were applied in chemical mechanical polishing (CMP) of A-plane sapphire. Grain size, morphology, element composition and existential state of product particles were detected with scanning electron microscope (SEM), inductive coupled plasma (ICP) and X-ray photoelectron spectroscopy (XPS). Polishing rate was verified with CP-4 polisher. Surface roughness of polished materials was tested with atomic force microscope. Chemical reaction during polishing process was analyzed based upon XPS test results of polished products. Compared with pure silica sol, non-spherical Co-doped silica sol gave 37% higher polishing rate and similar surface roughness, while spherical Co-doped silica sol had no clear advantage in polishing rate, no evidence showed that Co element was involved in chemical reaction according to XPS results. The positive role of non-spherical Co-doped silica sol in A-plane sapphire polishing is attributed to its shape priority, but not chemical reaction between Al2O3 and Co.
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