郭婷,左潇,郭鹏,李晓伟,吴晓春,谢仕芳,汪爱英.刻蚀工艺对四面体非晶碳膜生长及其性能的影响[J].表面技术,2017,46(4):143-149.
GUO Ting,ZUO Xiao,GUO Peng,LI Xiao-wei,WU Xiao-chun,XIE Shi-fang,WANG Ai-ying.Effect of Etching Process on Growth and Properties of Tetrahedral Amorphous Carbon Film[J].Surface Technology,2017,46(4):143-149 |
| 刻蚀工艺对四面体非晶碳膜生长及其性能的影响 |
| Effect of Etching Process on Growth and Properties of Tetrahedral Amorphous Carbon Film |
| 投稿时间：2016-12-01 修订日期：2017-04-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.04.024 |
| 中文关键词: 四面体非晶碳膜 辉光刻蚀 电弧刻蚀 刻蚀时间 结构 |
| 英文关键词:tetrahedral amorphous carbon film glow etching arc etching etching time structure |
| 基金项目:国家自然科学基金面上项目（51371187）；江西省科技项目（20161ACE50023）；浙江省公益项目（2016C31121） |
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| Author | Institution |
| GUO Ting | 1.School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China; 2. a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China |
| ZUO Xiao | a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China |
| GUO Peng | a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China |
| LI Xiao-wei | a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China |
| WU Xiao-chun | School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China |
| XIE Shi-fang | Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029, China |
| WANG Ai-ying | a. Key Laboratory of Marine Materials and Related Technologies, b. Zhejiang Key Laboratory of Marine Materials of Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China |
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| 中文摘要: |
| 目的 研究不同等离子体刻蚀工艺对基体和四面体非晶碳膜（ta-C）的影响，并进一步考察不同电弧等离子体刻蚀时间对ta-C薄膜结构的影响。方法 采用自主设计研制的45°单弯曲磁过滤阴极真空电弧镀膜设备，进行不同等离子体刻蚀以及ta-C薄膜的沉积。使用等离子体发射光谱仪表征离子种类及其密度，使用椭偏仪表征薄膜厚度，原子力显微镜表征刻蚀后的基体粗糙度，拉曼光谱仪和XPS表征薄膜结构，TEM分析薄膜的膜基界面结构。结果 辉光刻蚀工艺中，作用的等离子体离子以低密度的Ar离子为主；而电弧刻蚀时，作用的等离子体离子为高密度的Ar离子和少量的C离子，并且能够在基体表面形成约15 nm的界面层，并实现非晶碳膜（a-C）的预沉积。随电弧等离子体刻蚀时间增加，ta-C薄膜的sp3含量有所降低。结论 相比于辉光刻蚀，电弧刻蚀利于制备较厚的ta-C薄膜。这主要是因为电弧刻蚀时，基体表面形成良好的界面混合层，并预沉积了非晶碳膜，形成a-C/ta-C的梯度结构，有助于增强膜基结合力。 |
| 英文摘要: |
| The work aims to study effects of different plasma etching processes on silicon substrate and tetrahedral amorphous carbon (ta-C) films, and further survey effects of different arc plasma etching time on ta-C films. Etching of different plasma and deposition of ta-C films were performed by a home-made 45º bend magnetic filtered cathodic vacuum arc (FCVA) coater. Plasma types and density were characterized with optical emission spectrometer (OES); thickness of ta-C films with ellipsometer; roughness of treated substrates after etching with atomic force microscope (AFM); the film structure with Raman spectroscopy and XPS; and film-to-substrate interface structure was analyzed with TEM, representatively. The results showed that the Ar+ of low density dominated in the effective plasma of glow etching process while Ar+ of high density and a few C+ emerged in arc plasma etching process. After the arc plasma etching, a nearly 15 nm thick interface layer was formed on the substrates surface, and pre-deposition of amorphous carbon film (a-C) was observed. Moreover, sp3 content of the ta-C film decreased as the arc etching time increased. Compared with glow etching process, arc etching facilitates the deposition of thicker ta-C films, primarily due to the formation of interfacial layer on the substrate surface and the pre-deposition of amorphous carbon films layer in arc etching, which contributes to formation of a special a-C/ta-C gradient film structure and improvement of adhesion strength. |
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