杨涛,周细应,答建成,朱玉坤.氮气流量对磁控溅射法沉积NGZO薄膜性能的影响[J].表面技术,2017,46(2):103-107.
YANG Tao,ZHOU Xi-ying,DA Jian-cheng,ZHU Yu-kun.Effect of Nitrogen Flow Rate on Properties of NGZO Films Deposited by Magnetron Sputtering Method[J].Surface Technology,2017,46(2):103-107 |
| 氮气流量对磁控溅射法沉积NGZO薄膜性能的影响 |
| Effect of Nitrogen Flow Rate on Properties of NGZO Films Deposited by Magnetron Sputtering Method |
| 投稿时间：2016-08-12 修订日期：2017-02-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2017.02.016 |
| 中文关键词: NGZO薄膜 氮气 射频磁控溅射 光电性能 |
| 英文关键词:N-Ga co-doped zinc oxide films nitrogen radio frequency magnetron sputtering photoelectric properties |
| 基金项目: |
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| Author | Institution |
| YANG Tao | School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201600, China |
| ZHOU Xi-ying | School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201600, China |
| DA Jian-cheng | School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201600, China |
| ZHU Yu-kun | School of Materials Engineering, Shanghai University of Engineering Science, Shanghai 201600, China |
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| 中文摘要: |
| 目的 通过磁控溅射镀膜工艺，在玻璃上制备高质量的氮镓共掺杂氧化锌（NGZO）薄膜。方法 采用射频磁控溅射法，同时通入氩气和氮气，在流量比分别为25/10、25/20、25/25、25/30 ((mL/min)/(mL/min))条件下制备NGZO薄膜。通过XRD和SEM对薄膜的物相结构和表面形貌进行分析，通过紫外/可见分光光度计和霍尔效应测试仪对薄膜透过率和载流子浓度、迁移率及薄膜电阻率进行研究。结果 与未掺入N的Ga掺杂氧化锌（GZO）薄膜相比，在可见光区，尤其是600~800 nm范围内，NGZO薄膜平均透过率在80%以上，符合透明导电薄膜透过率的要求。GZO薄膜载流子浓度较高，电阻率较低，而掺入N后薄膜的载流子浓度和迁移率有所下降，电阻率有所增加。结论 在N-Ga共掺杂薄膜中，N的掺杂主要占据O空位，并吸引空位周围的电子，这减小了薄膜晶格畸变，并产生电子空穴，最终使得薄膜中电子载流子浓度降低，空穴载流子浓度增加，电阻率有所增加。随着氮气流量的变化，发现在25 mL/min时，薄膜具有最佳的综合性能。这种薄膜可用于紫外光探测器等需较大电阻率的应用中，并有望实现n-p型转化。 |
| 英文摘要: |
| The work aims to prepare high-quality N-Ga co-doped zinc oxide (NGZO) films on glass by means of magnetron sputtering coating technology. By means of radio frequency magnetron sputtering method, the thin films were prepared at flow ratios of 25/10, 25/20, 25/25 and 25/30 ((mL/min)/(mL/min)) with argon and nitrogen connected. Phase structure and surface topography of the films were analyzed by XRD and SEM. The transmittance, carrier concentration, carrier mobility ratio and film resistivity were studied by means of UV/visible spectrophotometer and Hall effect tester. Compare with N-free Ga doped ZnO (GZO) film, average transmittance ratio of NGZO was above 80% in visible region, especially 600~800 nm, meeting the transmittance ratio requirements for transparent conductive film. The carrier concentration of GZO film was higher, resistivity was lower. Once N was doped in the film, the carrier concentration and carrier mobility of NGZO film declined while the resistivity increased. In N-Ga co-doped thin film, the doped N atom occupies O vacancy and draws electrons around O vacancy, reducing lattice distortion and producing electron holes, and as a result, the electron carrier concentration reduces while both the electron hole concentration and the resistivity increase. Along with the change of nitrogen flow, the film is provided with the best comprehensive performance at the nitrogen flow of 25 mL/min. This film is applicable to such applications requiring larger resistivity as UV-detector, and may promote change from n-type to p-type. |
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