陈海峰,薛莹洁.国内外磁控溅射靶材的研究进展[J].表面技术,2016,45(10):56-63.
CHEN Hai-feng,XUE Ying-jie.Research Progress of Magnetron Sputtering Target at Home and Abroad[J].Surface Technology,2016,45(10):56-63 |
| 国内外磁控溅射靶材的研究进展 |
| Research Progress of Magnetron Sputtering Target at Home and Abroad |
| 投稿时间：2016-03-31 修订日期：2016-10-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2016.10.009 |
| 中文关键词: 磁控溅射 靶材刻蚀 结构优化 计算机模拟 等离子体特性 靶材冷却 |
| 英文关键词:magnetron sputtering target etching structure optimization computer simulation plasma characteristics target cooling system |
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| 中文摘要: |
| 磁控溅射以溅射温度低、沉积速率高的特点而被广泛应用于各种薄膜制造中，如单层或复合薄膜、磁性或超导薄膜以及有一定用途的功能性薄膜等，在科学领域以及工业生产中发挥着不可替代的作用。在介绍磁控溅射原理的基础上，阐述了靶材刻蚀机理，针对传统磁控溅射系统中靶材利用率低、刻蚀形貌不均匀等现状，从改善靶面磁场分布和模拟靶材刻蚀形貌两方面对国内外最新的研究进展进行总结与分析。研究表明，通过改变磁体的空间布置或增加导磁片能有效改善靶面磁场分布，采用适当的运动部件实现磁场和靶材的相对运动能有效扩展靶材的溅射面积，提高靶材利用率。在靶材刻蚀模拟中，通过改变溅射过程中的工艺条件（磁场强度、工作电压等）来研究靶面等离子特性，结果显示靶材刻蚀形貌会随着磁场强度的增加而变窄，靶材刻蚀速率会随工作电压的增大而增大等，这些研究成果对磁控溅射工艺参数的优化具有指导意义。最后，对靶材冷却系统的设计、靶材表面处理等对溅射过程的影响进行了简要展望。 |
| 英文摘要: |
| Magnetron sputtering is widely used in manufacturing thin films such as monolayer or composite thin films, magnetic or superconducting thin films as well as some functional thin films for certain purposes, and plays an irreplaceable role in various industrial fields due to low sputtering temperature and high deposition rate. Magnetron sputtering plays an irreplaceable role in the field of science and industrial production. By illustrating etching mechanism of target based on introduction of magnetron sputtering principle, the work aims to summarize and analyze latest research progress at home and abroad from the aspects of improving magnetic field distribution on target face and simulating etch topography of target. Studies showed that, by means of adjusting the magnet spatial arrangement or increasing magnetic conductive shims, sputtering area of target and utilization of target could be expanded effectively by realizing relative movement between magnetic field and target by virtue of appropriate moving parts. In the simulation of target etching, characteristics of the plasma on the target face were studied by changing technological conditions in sputtering (magnetic field intensity, cathode voltage, etc). Results showed that the target etching morphology became narrow with the increase of magnetic field intensity, etching rate of target increased with that of working voltage, etc. All these research results are of guiding significance to technological parameter optimization of magnetron sputtering. Finally, the effects of target cooling system design and target surface treatment on sputtering are forecasted. |
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