李春伟,田修波,巩春志,许建平.不同氩气气压下钒靶HIPIMS放电特性的演变[J].表面技术,2016,45(8):103-109.
LI Chun-wei,TIAN Xiu-bo,GONG Chun-zhi,XU Jian-ping.Evolution of Discharge Characteristics of High Power Impulse Magnetron Sputtering Vanadium Target under Various Argon Pressures[J].Surface Technology,2016,45(8):103-109
不同氩气气压下钒靶HIPIMS放电特性的演变
Evolution of Discharge Characteristics of High Power Impulse Magnetron Sputtering Vanadium Target under Various Argon Pressures
投稿时间:2016-04-05  修订日期:2016-08-20
DOI:10.16490/j.cnki.issn.1001-3660.2016.08.018
中文关键词:  高功率脉冲磁控溅射  氩气气压  V靶  放电靶电流  放电光谱特性  V薄膜
英文关键词:high power impulse magnetron sputtering  argon pressure  vanadium target  discharge target current  spectral characteristics  vanadium films
基金项目:中央高校基本科研业务费专项资金项目资助(2572015CB07);黑龙江省科学基金项目资助(QC2016053);中国博士后科学基金项目资助(2016M590273);国家自然科学基金项目资助(U1330110, 51175118);黑龙江省教育厅科学技术研究项目资助(12523008)
作者单位
李春伟 1.东北林业大学 工程技术学院,哈尔滨 150040;2.哈尔滨工业大学 先进焊接与连接国家重点实验室,哈尔滨 150001;3.东北林业大学 林业工程博士后流动站,哈尔滨 150040 
田修波 哈尔滨工业大学 先进焊接与连接国家重点实验室,哈尔滨 150001 
巩春志 哈尔滨工业大学 先进焊接与连接国家重点实验室,哈尔滨 150001 
许建平 黑龙江工程学院 材料与化学工程系,哈尔滨 150050 
AuthorInstitution
LI Chun-wei 1.College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China; 2.State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China; 3.Post-doctoral Mobile Research Station of Forestry Engineering, Northeast Forestry University, Harbin 150040, China 
TIAN Xiu-bo State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China 
GONG Chun-zhi State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China 
XU Jian-ping Department of Materials and Chemical Engineering, Heilongjiang Institute of Technology, Harbin 150050, China 
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中文摘要:
      目的 以V靶为例,研究高功率脉冲磁控溅射(HIPIMS)放电时不同工作气压下靶脉冲电流及等离子体发射光谱的表现形式和演变规律,为HIPIMS技术的进一步广泛应用提供理论依据。方法 利用数字示波器采集HIPIMS脉冲放电电流波形,并利用发射光谱仪记录不同放电状态下的光谱谱线,分析不同气压下V靶HIPIMS放电特性的演变规律。同时,利用HIPIMS技术成功制备了V膜,并利用扫描电子显微镜观察了V膜的截面形貌。结果 不同氩气气压下,随着靶脉冲电压的增加,靶电流峰值、靶电流平台值及靶电流平均值均单调增加,而且增加的速度越来越快,但靶电流峰值的增加速度明显高于平台值,这是由于脉冲峰值电流由气体放电决定所致。不同气压下,Ar0、Ar+、V0和V+四种谱线峰的光谱强度均随靶电压的增加而增加,相同靶电压时,其光谱强度随着气压的增加而增加。当气压为0.9 Pa、靶电压为610 V时,Ar和V的离化率分别为78%和35%。此外,利用HIPIMS技术制备的V膜光滑、致密,无柱状晶生长形貌特征。结论 较高的工作气压和靶脉冲电压有利于获得较高的系统粒子离化率,但HIPIMS放电存在不稳定性。合适的工作气压是获得优质膜层的关键。
英文摘要:
      Objective As a new technology with high ionization rate of sputtered materials, High Power Impulse Magnetron Sputtering (HIPIMS) has widely received more and more attention home and abroad. The form and evolution of target pulse current and plasma emission spectrum of HIPIMS discharge with V target as an example under different working pressures have been investigated, which provide theoretical basis for the further application of HIPIMS technology. Methods HIPIMS pulse discharge current waveforms were acquired by digital oscilloscope and the spectral lines were recorded by emission spectrometer. The evolution law of V target HIPIMS discharge characteristics under different pressures was analyzed. At the same time, the V film was prepared by HIPIMS technique and the morphology of the V film was observed by scanning electron microscope. Results Under different argon pressures, the peak of discharge current, the platform of discharge current and the mean discharge current all monotonicly increased with target voltage. And they increased faster and faster. However, the peak value of the target current was significantly higher than that of the platform, which was due to the pulse peak current determined by gas discharge. Ar0, Ar+, V0 and V+ intensity increased with the increase of target voltage under different pressures. The spectral intensity increased with the increase of the pressure at the same target voltage. The ionizations of Ar and V were 78% and 35% at target voltage of 610 V and Ar pressure of 0.9 Pa. In addition, the V films prepared by HIPIMS technique were smooth and dense, and had no columnar crystal growth morphology. Conclusion Higher working pressure and target pulse voltage are beneficial to obtain higher system particle ionization rate, but the HIPIMS discharge is not stable. Suitable working pressure is the key to obtain high quality film.
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