李春伟,苗红涛,徐淑艳,张群利.复合高功率脉冲磁控溅射技术的研究进展[J].表面技术,2016,45(6):82-90.
LI Chun-wei,MIAO Hong-tao,XU Shu-yan,ZHANG Qun-li.Research Progress of Hybrid High Power Impulse Magnetron Sputtering[J].Surface Technology,2016,45(6):82-90
复合高功率脉冲磁控溅射技术的研究进展
Research Progress of Hybrid High Power Impulse Magnetron Sputtering
投稿时间:2016-03-23  修订日期:2016-06-20
DOI:10.16490/j.cnki.issn.1001-3660.2016.06.013
中文关键词:  高功率脉冲磁控溅射  高离化率  物理气相沉积  辅助装置
英文关键词:high power impulse magnetron sputtering  high ionized fraction  physical vapor deposition  auxiliary device
基金项目:中央高校基本科研业务费专项资金项目资助(2572015CB07);黑龙江省科学基金项目资助(QC2016053);中国博士后科学基金项目资助(2016M590273);黑龙江省教育厅科学技术研究项目资助(12523008)
作者单位
李春伟 1.东北林业大学 工程技术学院,哈尔滨 150040; 2.东北林业大学 林业工程博士后流动站,哈尔滨 150040 
苗红涛 河南牧业经济学院 包装与印刷工程学院,郑州 450046 
徐淑艳 东北林业大学 工程技术学院,哈尔滨 150040 
张群利 东北林业大学 工程技术学院,哈尔滨 150040 
AuthorInstitution
LI Chun-wei 1.College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China; 2.Post-doctoral Mobile Research Station of Forestry Engineering, Northeast Forestry University, Harbin 150040, China 
MIAO Hong-tao College of Packaging and Printing, Henan University of Animal Husbandry and Economy, Zhengzhou 450046, China 
XU Shu-yan College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China 
ZHANG Qun-li College of Engineering and Technology, Northeast Forestry University, Harbin 150040, China 
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中文摘要:
      高功率脉冲磁控溅射技术(HIPIMS)是一门新兴的高离化率磁控溅射技术。概述了 HIPIMS的技术优势,包括高膜层致密度和平滑度、高膜基界面结合强度以及复杂形状工件表面膜层厚度均匀性好等。同时归纳了 HIPIMS 存在的问题,包括沉积速率及低溅射率金属靶材离化率低等。在此基础上,重点综述了近年来复合 HIPIMS 技术的研究进展,其中复合其他物理气相沉积技术的 HIPIMS,包括复合直流磁控溅射增强 HIPIMS、复合射频磁控溅射增强 HIPIMS、复合中频磁控溅射增强 HIPIMS、复合等离子体源离子注入与沉积增强 HIPIMS 等;增加辅助设备或装置的 HIPIMS,包括增加感应耦合等离子体装置增强 HIPIMS、增加电子回旋共振装置增强 HIPIMS,以及增加外部磁场增强 HIPIMS 等。针对各种形式的复合 HIPIMS 技术,分别从复合 HIPIMS 技术的放电行为、离子输运特性,及制备膜层的结构与性能等方面进行了归纳。最后展望了复合 HIPIMS 技术的发展方向。
英文摘要:
      High power impulse magnetron sputtering (HIPIMS) is a novel technique magnetron sputtering with high ionized fraction. The advantages of HIPIMS were summarized, including high film density and smoothness, high bonding strength of film-substrate interface and good thickness uniformity on the surface of complex shape workpiece. The problems of HIPIMS were also induced, including low deposition rate and the ionization rate of low sputtering rate metal target. On this basis, the paper reviewed the recent research progress of hybrid HIPIMS. The hybrid HIPIMS with physical vapor deposition technology included hybrid DC magnetron sputtering enhanced HIPIMS, hybrid radio frequency magnetron sputtering enhanced HIPIMS, hybrid medium frequency magnetron sputtering enhanced HIPIMS, and hybrid plasma ion implantation enhanced HIPIMS. The hybrid HIPIMS with auxiliary equipment or device included adding the inductively coupled plasma enhanced HIPIMS, adding the electron cyclotron resonance device enhanced HIPIMS and adding the external magnetic field enhanced HIPIMS. In view of various forms of hybrid HIPIMS technology, the discharge behavior, ion transport properties and the structure and properties of the film were summarized, respectively. Finally, the future development trend of hybrid HIPIMS technology was prospected.
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