熊礼威,彭环洋,汪建华,崔晓慧,龚国华.H2/Ar流量比对纳米金刚石形貌和结构的影响[J].表面技术,2017,46(1):45-50.
XIONG Li-wei,PENG Huan-yang,WANG Jian-hua,CUI Xiao-hui,GONG Guo-hua.Effects of H2/Ar Flow Rate on Morphology and Structure of Nanocrystalline Diamond[J].Surface Technology,2017,46(1):45-50
H2/Ar流量比对纳米金刚石形貌和结构的影响
Effects of H2/Ar Flow Rate on Morphology and Structure of Nanocrystalline Diamond
投稿时间:2016-08-05  修订日期:2017-01-20
DOI:10.16490/j.cnki.issn.1001-3660.2017.01.008
中文关键词:  H2/Ar流量比  NCD薄膜  表面形貌  MPECVD  平整度  晶粒尺寸
英文关键词:H2/Ar flow ratio  NCD film  surface morphology  MPECVD  flatness  grain size
基金项目:国家自然科学基金项目(51402220);武汉工程大学青年基金项目(Q201501)
作者单位
熊礼威 武汉工程大学 材料科学与工程学院,武汉 430074 
彭环洋 武汉工程大学 材料科学与工程学院,武汉 430074 
汪建华 武汉工程大学 材料科学与工程学院,武汉 430074 
崔晓慧 武汉工程大学 材料科学与工程学院,武汉 430074 
龚国华 武汉工程大学 材料科学与工程学院,武汉 430074 
AuthorInstitution
XIONG Li-wei School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China 
PENG Huan-yang School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China 
WANG Jian-hua School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China 
CUI Xiao-hui School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China 
GONG Guo-hua School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430074, China 
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中文摘要:
      目的 研究不同H2/Ar流量比对纳米金刚石形貌和结构的影响。 方法 采用MPECVD法制备了质量较好的纳米金刚石薄膜,并通过SEM、XRD对金刚石薄膜的形貌、结构以及晶粒尺寸进行了测试,还使用Raman对金刚石D峰、纳米金刚石特征峰(TPA)的变化趋势进行了分析。结果 当Q(H2):Q(Ar)=50:49时,制备的金刚石晶粒为亚微米范畴,其平均晶粒尺寸为250 nm,表面平整度较差,出现堆积层错现象,但金刚石特征峰(D峰)最强,生长速率达到最大,约为125 nm/h;Q(H2):Q(Ar)=10:89时,表面平整度高,二次形核现象明显,平均晶粒尺寸为20 nm;进一步减小H2/Ar流量比为0时,可发现晶粒由纳米变为超纳米,二次形核更为明显,表面平整更高,其平均晶粒尺寸为3 nm,另外Raman测试发现金刚石特征峰强度随H2/Ar 流量比的减小而减小,而纳米金刚石特征峰随H2/Ar 流量比的减小而增大。结论 随着H2/Ar 流量比的增加,金刚石表面平整度逐渐变差,表面粗糙度也在逐渐增大,同时金刚石的晶粒尺寸和生长速率在Q(H2):Q(Ar)=50:49时达到最大。
英文摘要:
      The work aims to study the effects of different H2/Ar flow rates on morphology and structure of nanocrystalline diamond. Better nanocrystalline diamond (NCD) films were prepared by MPECVD method, and the morphology, structure and grain size of diamond films were tested by SEM and XRD. In addition, the variation trend of diamond D peak and nano diamond peak (TPA) was also analyzed by using Raman. Provided with Q(H2):Q(Ar)=50:49, the prepared diamond grains fell within submicron category, the average grain size was 250 nm, surface smoothness was poor, stacking fault occurred while the diamond characteristic peak (D peak) reached the maximum with fastest growth rate up to 125 nm/h; provided with Q(H2):Q(Ar)=10:89, surface smoothness was high, second nucleating phenomenon was obvious and the average grain size was 20 nm; provided with Q(H2):Q(Ar)=0, the grains changed from nano to super nano category, second nucleating phenomenon was more obvious, the surface roughness was higher and the average grain size was 3 nm. In addition, the Raman test showed that the diamond characteristic peak intensity decreased with the decrease of flow rate of H2/Ar while that of nano diamond increased with the decrease of the H2/Ar flow ratio. With the increase of H2/Ar flow rate, the surface roughness of diamond was gradually getting worse, and the surface roughness was gradually increasing. Meanwhile, grain size and growth rate of the diamond reached the maximum provided with Q(H2):Q(Ar)=50:49.
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