林益波,赵天晨,邓乾发,袁巨龙.介电泳抛光方法及其电极形状的实验研究[J].表面技术,2016,45(1):155-160.
LIN Yi-bo,ZHAO Tian-chen,DENG Qian-fa,YUAN Ju-long.Experimental Study on Dielectrophoresis Polishing and Shape of Electrode[J].Surface Technology,2016,45(1):155-160
介电泳抛光方法及其电极形状的实验研究
Experimental Study on Dielectrophoresis Polishing and Shape of Electrode
投稿时间:2015-09-20  修订日期:2016-01-20
DOI:10.16490/j.cnki.issn.1001-3660.2016.01.025
中文关键词:  介电泳抛光  电极形状  单晶硅片  均匀性  表面粗糙度  去除率
英文关键词:dielectrophoresis polishing  electrode shape  monocrystalline silicon wafer  uniformity  surface roughness  removal rate
基金项目:国家自然科学基金资助项目(51275476);浙江省科技创新团队项目(2011R50011-06)
作者单位
林益波 浙江工业大学 超精密加工研究中心, 杭州 310014 
赵天晨 浙江工业大学 超精密加工研究中心, 杭州 310014 
邓乾发 浙江工业大学 超精密加工研究中心, 杭州 310014 
袁巨龙 浙江工业大学 超精密加工研究中心, 杭州 310014 
AuthorInstitution
LIN Yi-bo Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China 
ZHAO Tian-chen Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China 
DENG Qian-fa Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China 
YUAN Ju-long Ultra-precision Machining Center, Zhejiang University of Technology, Hangzhou 310014, China 
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中文摘要:
      目的 验证介电泳抛光方法的有效性,研究电极形状对介电泳抛光方法均匀性、抛光效率和去除率的影响。 方法 选取直径 76. 2 mm 的单晶硅片为实验对象,进行传统化学机械抛光(CMP)实验和使用 4 种电极形状的介电泳抛光实验,每隔 30 min 测量硅片不同直径上的表面粗糙度以及硅片的质量,然后对测量的数据进行处理和分析。 结果 与传统 CMP 方法比较,使用介电泳抛光方法抛光的硅片,不同直径上的表面粗糙度相差小,粗糙度下降速度快,使用直径 60 mm 圆电极形状介电泳抛光时相差最小,粗糙度下降最快。 介电泳抛光方法去除率最低能提高 11. 0% ,最高能提高 19. 5% ,最高时所用电极形状为内径70 mm、外径90 mm 的圆环。 结论 介电泳抛光方法抛光均匀性、效率和去除率均优于传统 CMP 方法。
英文摘要:
      Objective To demonstrate the effectiveness of dielectrophoresis polishing method (DPM) and the effect of the electrode shape on uniformity, efficiency and to investigate the removal rate. Methods The 76. 2 mm-diameter monocrystalline silicon wafer was polished by CMP and DPM. The surface roughness of different positions on wafer and quality of wafer were measured every 30 minutes. The measured values were processed and analyzed. Results Compared with CMP, the difference of surface roughness between different positions on wafer polished by DPM was less and the roughness decreased more quickly, and the difference was the least and the roughness decreased in the fastest speed when the circle electrode of 60 mm in diameter was used. The removal rate of DPM was enhanced by 11. 0% ~19. 5% when the annulus electrode of 70 mm in inner diameter and 90 mm in external diameter was used. Conclusion The uniformity, efficiency and removal rate of DPM were superior to CMP.
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