张玉,雷天宇,任红,孙远洋,蔡苇,符春林.BiFeO3 多铁薄膜掺杂改性研究进展[J].表面技术,2015,44(5):83-90,122.
ZHANG Yu,LEI Tian-yu,REN Hong,SUN Yuan-yang,CAI Wei,FU Chun-lin.Research Progress in Doping Modification of the Bismuth Ferrite Thin Film[J].Surface Technology,2015,44(5):83-90,122 |
| BiFeO3 多铁薄膜掺杂改性研究进展 |
| Research Progress in Doping Modification of the Bismuth Ferrite Thin Film |
| 投稿时间：2014-12-30 修订日期：2015-05-20 |
| DOI：10.16490/j.cnki.issn.1001-3660.2015.05.016 |
| 中文关键词: 铁酸铋 薄膜 漏电流 铁电性 掺杂改良 |
| 英文关键词:bismuth ferrite thin film leakage current ferroelectricity doping modification |
| 基金项目:国家自然科学基金(51102288, 51372283);重庆市教委科学技术研究项目 ( KJ131402);重庆科技学院博士教授科研启动基金(CK2013B08);重庆科技学院大学生科技创新训练计划项目(2014026) |
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| Author | Institution |
| ZHANG Yu | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
| LEI Tian-yu | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
| REN Hong | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
| SUN Yuan-yang | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
| CAI Wei | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
| FU Chun-lin | School of Metallurgy and Materials Engineering, Chongqing University of Science and Technology, Chongqing 401331, China |
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| 中文摘要: |
| 铁酸铋是目前发现的唯一的室温单相多铁性的材料,其禁带宽度较小,剩余极化强度较大,居里温度较高,在光电器件、自旋电子器件、铁电随机存储器、磁电存储单元等领域有着广阔的应用前景。 但铁酸铋薄膜存在漏电流较大、磁电耦合性较弱等问题,制约了在实际中的应用。 离子掺杂具有操作方便、易于实现薄膜的微结构及性能调控等优点,因而受到广泛关注。 综述了国内外近年来关于铁酸铋薄膜电性能掺杂改性的相关工作,阐述了不同种类的掺杂,包括 A 位(三价镧系元素与二价碱金属元素)、B 位(过渡金属元素等)以及 AB 位共掺杂,同时根据掺杂对铁酸铋薄膜的漏电流、铁电性以及介电性能的影响,对 A 位掺杂和 B 位掺杂中的元素进行了分类,系统总结了各类元素掺杂改性的效果及其机理。 最后,提出了铁酸铋薄膜亟待解决的问题。 |
| 英文摘要: |
| Bismuth ferrite is the only single phase multiferroic material at room temperature. It has broad application prospects in the fields of optoelectronic devices, spin electric devices, ferroelectric random access memories, magnetoelectric memory because of its narrow band gap, large remnant polarization and high ferroelectric Curie temperature. However, the practical application of bismuth ferrite thin films is largely limited due to high leakage current and weak magnetic coupling. Ion doping is the most popular method because of its simplicity, easy to adjust microstructure and properties. This paper reviewed the research progress in doping modification of the electrical properties of bismuth ferrite thin films in recent years and the different types of doping, including A-site (trivalent Lanthanides and divalent alkali ions), B-site ( such as transition metals) and A-B sites co-doping. The elements in A-site and B-site doping were clarified based on the effects of doping on the leakage current, ferroelectricity and remnant polarization of bismuth ferrite films. And the effects and mechanisms of various types of doping were systemically summarized. Finally, some urgent questions to be promptly solved were raised. |
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