张盼盼,丁龙先,张帅拓.工艺参数对磁控溅射制备 TiO2 薄膜结晶性的影响[J].表面技术,2015,44(5):48-52,101.
ZHANG Pan-pan,DING Long-xian,ZHANG Shuai-tuo.Effects of Process Parameters on Crystalline TiO2 Thin Films Prepared by Magnetron Sputtering[J].Surface Technology,2015,44(5):48-52,101
工艺参数对磁控溅射制备 TiO2 薄膜结晶性的影响
Effects of Process Parameters on Crystalline TiO2 Thin Films Prepared by Magnetron Sputtering
投稿时间:2015-01-03  修订日期:2015-05-20
DOI:10.16490/j.cnki.issn.1001-3660.2015.05.009
中文关键词:  磁控溅射  工艺参数  TiO2 薄膜  结晶性
英文关键词:magnetron sputtering  process parameters  TiO2 thin films  crystalline property
基金项目:
作者单位
张盼盼 沈阳大学, 沈阳 110044 
丁龙先 沈阳大学, 沈阳 110044 
张帅拓 沈阳大学, 沈阳 110044 
AuthorInstitution
ZHANG Pan-pan Shenyang University, Shenyang 110044, China 
DING Long-xian Shenyang University, Shenyang 110044, China 
ZHANG Shuai-tuo Shenyang University, Shenyang 110044, China 
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中文摘要:
      目的 探究 TiO2 薄膜结晶性与工艺参数之间的规律。 方法 采用直流反应磁控溅射法,改变工艺条件(样品位置、溅射功率、氧气分压、是否开转架、沉积温度以及是否退火),在普通载玻片基底上制备 TiO2 薄膜,并利用 XRD 和 SEM 对不同工艺参数下获得的 TiO2 薄膜进行分析。 结果 在靶基距固定的情况下,仅改变样品悬挂的上下位置时,薄膜的结晶性差别不大。 随着溅射功率在一定范围内增大,薄膜的结晶性越来越好(趋于锐钛矿晶型)。 与氧气分压为 5% 时相比,10% 时的薄膜结晶性更优;与开转架时相比,不开转架时薄膜的结晶性更优。 沉积温度在 300,350 ℃ 两者之间变化时,对薄膜的结晶性影响不大。 退火后薄膜的结晶性优于未退火薄膜。 结论 样品位置、沉积温度对于 TiO2 薄膜的结晶性影响不大;氧气分压、是否开转架对 TiO2 薄膜的结晶性有一定影响;溅射功率、退火与否对 TiO2 薄膜的结晶性影响较大,并且退火后出现金红石相。
英文摘要:
      Objective To explore the pattern between the crystallization of TiO2 thin films and the process parameters. Methods The process conditions (the position of the sample, sputtering power, oxygen partial pressure, the bogie, deposition temperature and annealing) were modified by the DC reactive magnetron sputtering method to prepare TiO2 thin films on the common slide glass substrate. TiO2 thin films under different process parameters were analyzed by XRD and SEM. Results In the case of fixed targetsubstrate distance, simply changing the sample suspension position had little influence on thin-film crystalline. As the sputtering power increased within a certain range, the film crystalline became better and better (tending to anatase crystal). Crystalline of the thin film whose oxygen partial pressure was 10% was better than that whose pressure was 5% . The thin film crystalline was superior when the turntable was not opened, compared to when the turntable was opened. Deposition temperature (shifting between 300 ℃ and 350 ℃) made no difference to thin film crystalline. Crystalline of thin film annealed was superior to that not annealed. Conclusion Sample suspension position and deposition temperature have little effect on the crystalline property of TiO2 films. Oxygen partial pressure and opening of turntable have some impacts on the crystalline property of TiO2 films. Sputtering power and annealing have a greater influence on the crystallization of TiO2 thin film, the rutile crystal diffraction peaks appear after being annealed.
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