李炎,孙鸣,李洪波,刘玉岭,王傲尘,何彦刚,闫辰奇,张金.铜膜高去除速率 CMP 碱性抛光液的研究及其性能测定[J].表面技术,2014,43(3):74-79.
LI Yan,SUN Ming,LI Hong-bo,LIU Yu-ling,WANG Ao-chen,HE Yan-gang,YAN Chen-qi,ZHANG Jin.Study on CMP Alkaline Polishing Liquid with High Removal Rate for Copper Film and the Determination of Its Performance[J].Surface Technology,2014,43(3):74-79 |
| 铜膜高去除速率 CMP 碱性抛光液的研究及其性能测定 |
| Study on CMP Alkaline Polishing Liquid with High Removal Rate for Copper Film and the Determination of Its Performance |
| 投稿时间：2013-12-29 修订日期：2014-01-17 |
| DOI： |
| 中文关键词: 碱性研磨液 铜 CMP TSV 技术 FA / O 型螯合剂 表面粗糙度 |
| 英文关键词:alkaline slurry copper CMP TSV technology FA / O chelating agent surface roughness |
| 基金项目:国家中长期科技发展规划 02 科技重大专项( 2009ZX02308 ) ;河北省自然科学基金( E2013202247,F2012202094 ) ;河北省教育厅基金(2011128) |
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| Author | Institution |
| LI Yan | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| SUN Ming | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| LI Hong-bo | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China;College of Information Engineering, Hebei United University, Tangshan 063000, China |
| LIU Yu-ling | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| WANG Ao-chen | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| HE Yan-gang | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| YAN Chen-qi | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
| ZHANG Jin | Institute of Microelectronic Technique and Materials, Hebei University of Technology, Tianjin 300130, China |
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| 中文摘要: |
| 目的 探索适合于 TSV 技术的最佳 CMP 工艺。 方法 在碱性条件下,利用碱性 FA / O 型鳌合剂极强的鳌合能力,对铜膜进行化学机械抛光,通过调节抛光工艺参数及抛光液配比,获得超高的抛光速率和较低的表面粗糙度。 结果 在压力 27 . 56 kPa, 流量 175 mL / min, 上下盘转速 105 / 105 r / min, pH =11 . 0 ,温度 40 ℃ ,氧化剂、磨料、螯合剂体积分数分别为 1% ,50% ,10% 的条件下,经过 CMP 平坦化,铜膜的去除速率达 2067 . 245 nm / min,且表面粗糙度得到明显改善。 结论 该工艺能获得高抛光速率。 |
| 英文摘要: |
| Objective The optimal CMP technique used for TSV Technology was explored in this paper. Methods In alkaline condition, chemical mechanical polishing was carried out on the copper film and the high polishing rate and low surface roughness were acquired through adjustment of polishing technical parameters and polishing liquid formulation, taking advantage of the extremely strong chelating ability of FA / O chelating agent. Results The Cu film removal rate reached 2067. 245 nm / min and the roughness was obviously improved after CMP when the pressure was 27. 56 kPa, the flow rate was 175 mL / min, the rotating speed was 105 / 105 r / min, the pH value was 11. 0, the temperature was 40 ℃ , and the slurry contained 1% oxidant, 50% abrasive and 10% chelating agent. Conclusion The process could achieve high polishing rate. |
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