高永超,程好,杨淑平,庄维伟,蔡渊,张国栋.金属基带的连续非接触式电化学抛光[J].表面技术,2014,43(2):105-108,155.
GAO Yong-chao,CHENG Hao,YANG Shu-ping,ZHUANG Wei-wei,CAI Yuan,ZHANG Guo-dong.Non-contact and Continuous Electrochemical Polishing of the Metal Strip[J].Surface Technology,2014,43(2):105-108,155
金属基带的连续非接触式电化学抛光
Non-contact and Continuous Electrochemical Polishing of the Metal Strip
投稿时间:2013-10-24  修订日期:2013-12-05
DOI:
中文关键词:  非接触式  电化学抛光  工艺条件  平均粗糙度
英文关键词:non-contact  electrochemical polishing  process conditions  average roughnes
基金项目:
作者单位
高永超 苏州新材料研究所有限公司, 江苏 苏州 215125 
程好 苏州新材料研究所有限公司, 江苏 苏州 215125 
杨淑平 苏州新材料研究所有限公司, 江苏 苏州 215125 
庄维伟 苏州新材料研究所有限公司, 江苏 苏州 215125 
蔡渊 苏州新材料研究所有限公司, 江苏 苏州 215125 
张国栋 苏州新材料研究所有限公司, 江苏 苏州 215125 
AuthorInstitution
GAO Yong-chao Suzhou Advanced Material Research Institute, Suzhou 215125, China 
CHENG Hao Suzhou Advanced Material Research Institute, Suzhou 215125, China 
YANG Shu-ping Suzhou Advanced Material Research Institute, Suzhou 215125, China 
ZHUANG Wei-wei Suzhou Advanced Material Research Institute, Suzhou 215125, China 
CAI Yuan Suzhou Advanced Material Research Institute, Suzhou 215125, China 
ZHANG Guo-dong Suzhou Advanced Material Research Institute, Suzhou 215125, China 
摘要点击次数:
全文下载次数:
中文摘要:
      目的 研发一种适合工业生产连续带材的非接触式电化学抛光方法。 方法 采用以磷酸-硫酸为主要氧化剂的环保型电化学抛光液对金属基带进行电化学抛光,研究阳极电流密度( JA) 、电解液温度( t) 、基带与电极间的距离( L) 和走带速度( v) 对基带表面粗糙度的影响,优化抛光工艺条件。 结果 优化的工艺条件如下:JA 为 1500 ~ 2500 A / m2,t 为 40 ~ 80 ℃ ,L 为 4 ~ 12 mm,v 为 0 . 5 ~ 1 . 8 m / min。 在此工艺条件下进行电化学抛光,极为有效地降低了金属基带的表面粗糙度,光亮度达到镜面状态,原子力显微镜测试 5 μmX5 μm 范围内的表面平均粗糙度值低于 1 . 0 nm。 结论 该抛光工艺实现了千米级基带的连续性抛光,达到工业化生产要求。
英文摘要:
      Objective To develop a non-contact electrochemical polishing method which is suitable for producing continuous metal strip in industry. Methods Using environment friendly phosphoric acid-sulfuric acid as the main antioxidant electrochemical polishing solution, the influences of the anodic current density ( JA ) , the electrolyte temperature ( t ) , the distance between electrodes and metal strip( L) , the tape speed( v) on the surface roughness of the metal strip were studied, and the polishing process conditions were optimized. Results The optimized process conditions are as following: JA : 1500 ~ 2500 A / m2, t: 40 ~ 80 ℃ , L: 4 ~ 12 mm, v: 0. 5 ~ 1. 8 m / min. The results showed that the electrochemical polishing process could effectively reduce the surface roughness of the metal strip under the optimized conditions,the brightness of the polished tape could reach the mirror state, the average surface roughness Ra value was less than 1. 0 nm as tested by AFM around the 5 μmX5 μm micron. Conclusion The polishing process achieved the continuous polishing of metal strip at kilometer level and met the requirements for industrial production.
查看全文  查看/发表评论  下载PDF阅读器
关闭

关于我们 | 联系我们 | 投诉建议 | 隐私保护 | 用户协议

您是第19512374位访问者    渝ICP备15012534号-3

版权所有:《表面技术》编辑部 2014 surface-techj.com, All Rights Reserved

邮编:400039 电话:023-68792193传真:023-68792396 Email: bmjs@surface-techj.com

渝公网安备 50010702501715号