赵齐,代明江,韦春贝,邱万奇,侯惠君,谭笛.厚钛过渡层缓解铜基上热丝 CVD 金刚石薄膜内应力[J].表面技术,2013,42(5):19-23.
ZHAO Qi,DAI Ming-jiang,WEI Chun-bei,QIU Wan-qi,HOU Hui-jun,TAN Di.Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition[J].Surface Technology,2013,42(5):19-23
厚钛过渡层缓解铜基上热丝 CVD 金刚石薄膜内应力
Thick Titanium Interlayer Remitting Stress in Diamond Films Deposited on Copper Substrate by Hot Filaments Chemical Vapor Deposition
投稿时间:2013-05-25  修订日期:2013-06-18
DOI:
中文关键词:  金刚石薄膜  钛过渡层  内应力  热丝化学气相沉积
英文关键词:diamond films  titanium interlayer  internal stress  hot filaments chemical vapor deposition
基金项目:广东省科技计划项目(2011A081301003)
作者单位
赵齐 广州有色金属研究院, 广州 510651;华南理工大学 材料科学与工程学院, 广州 510640 
代明江 广州有色金属研究院, 广州 510651 
韦春贝 广州有色金属研究院, 广州 510651 
邱万奇 华南理工大学 材料科学与工程学院, 广州 510640 
侯惠君 广州有色金属研究院, 广州 510651 
谭笛 广州有色金属研究院, 广州 510651 
AuthorInstitution
ZHAO Qi Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651 , China;School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 , China 
DAI Ming-jiang Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651 , China 
WEI Chun-bei Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651 , China 
QIU Wan-qi School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640 , China 
HOU Hui-jun Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651 , China 
TAN Di Guangzhou Research Institute of Non-ferrous Metals, Guangzhou 510651 , China 
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中文摘要:
      以紫铜为基体,在紫铜上先采用磁控溅射技术镀一层金属钛,再以 H2 和 CH4 作为反应气体,采用热丝化学气相沉积法( HFCVD) 在钛过渡层上合成金刚石薄膜,研究不同钛过渡层厚度对金刚石薄膜质量的影响。 利用 X 射线( XRD) 、激光拉曼光谱( Raman) 、扫描电镜( SEM) 分析薄膜的结构、成分和表面形貌,用能谱仪( EDS) 对热处理前后样品的表面进行了元素分析。 研究发现,当钛过渡层厚度为 3 μm 时,生成的金刚石薄膜受到较大内应力而发生破裂;当钛过渡层厚度为 25 μm 时,金刚石薄膜质量较好,薄膜受一定内应力,但没有破裂;850 ℃ 左右保温热处理 12 h,铜原子与钛原子发生了扩散。
英文摘要:
      Diamond films were deposited on metal copper substrate with a buffer layer of titanium with the mixture gas of methane and hydrogen by hot filaments chemical vapor deposition ( HFCVD) . Effects of different thickness of titanium layer on diamond films by HFCVD were investigated. The components of films were investigated using X-ray diffraction ( XRD) and laser Raman spectrum, and the surface morphology and structure were observed by scanning electron microscopy ( SEM) . The surface element of samples processed by heat treatment were analyzed using energy disperse spectroscopy ( EDS ) . The results show that when the thickness of titanium layer is 3 μm, the diamond film breaks down due to large internal stress. When the thickness of titanium increases to 25 μm, the diamond film is good and don爷 t break down with the existence of internal stress in the membrane. The diffusion between copper and titanium happens when the sample is processed by heat treating at 850 ℃ for
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