孙月峰,张维佳,宋登元,刘嘉,张雷,马强,吴然嵩,张冷.掺硼和掺磷的氢化纳米硅薄膜及其应用于类叠层太阳电池的研究[J].表面技术,2013,42(3):5-8.
SUN Yue-feng,ZHANG Wei-jia,SONG Deng-yuan,LIU Jia,ZHANG Lei,MA Qiang,WU Ran-song,ZHANG Leng.The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells[J].Surface Technology,2013,42(3):5-8 |
| 掺硼和掺磷的氢化纳米硅薄膜及其应用于类叠层太阳电池的研究 |
| The Research of Boron-doped and Phosphorus-doped Nanocrystalline Silicon Films and Application in Analogue Tandem Solar Cells |
| 投稿时间：2013-01-26 修订日期：2013-03-01 |
| DOI： |
| 中文关键词: RF-PECVD 掺硼 掺磷 纳米硅薄膜 类叠层太阳电池 |
| 英文关键词:RF-PECVD Boron-doped phosphorus-doped nanocrystalline silicon film analogue tandem solar cell |
| 基金项目:863 计划资助项目(2012AA050304) |
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| Author | Institution |
| SUN Yue-feng | Beihang University, Beijing 100191 , China |
| ZHANG Wei-jia | Beihang University, Beijing 100191 , China |
| SONG Deng-yuan | YINGLI SOLAR, Baoding 071051 , China |
| LIU Jia | Beihang University, Beijing 100191 , China |
| ZHANG Lei | YINGLI SOLAR, Baoding 071051 , China |
| MA Qiang | Beihang University, Beijing 100191 , China |
| WU Ran-song | Beihang University, Beijing 100191 , China |
| ZHANG Leng | Beihang University, Beijing 100191 , China |
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| 中文摘要: |
| 采用射频等离子体增强化学气相沉积法,制备了掺硼和掺磷的氢化纳米硅薄膜( nc-Si : H) ,并将其应用于纳米硅薄膜类叠层太阳电池中。 分析了薄膜样品的光学性能及表面形貌,结果表明:P 型掺硼纳米硅薄膜的光学带隙为 2 . 189 eV,电导率为 8 . 01 S / cm,霍尔迁移率为 0 . 521 cm2/ ( V·S) ,载流子浓度为 9 . 61 X1019/cm3;N 型掺磷纳米硅薄膜的光学带隙为 1 . 994 eV,电导率为 1 . 93 S / cm,霍尔迁移率为 1 . 694 cm2/ ( V·S) ,载流子浓度为 7 . 113 X1018/ cm3;两者的晶粒尺寸都在 3 ~ 5 nm 之间,晶态比都在 35% ~ 45% 之间,并且颗粒沉积紧密,大小比较均匀。 制备了大小为 20 mm X 20 mm,结构为 Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H /i-nc-Si : H / n-c-Si / Al 背电极的纳米硅薄膜类叠层太阳电池,通过 I-V 曲线测试,其 VOC 达到 544 . 3 mV,ISC 达到 85 . 6mA,填充因子为 65 . 7% 。 |
| 英文摘要: |
| Boron-doped and phosphorus-doped thin films ( nc-Si : H) were deposited by RF-PECVD system and applied to fabricate analogue tandem solar cells. The optical performance and morphology of the thin film sample were analyzed. The results showed that the optical band gap, conductivity, hall mobility and carrier concentration of P-type nc-Si : H thin films were 2 . 189 eV, 8 . 01 S / cm, 0 . 521 cm2/ ( V·S) and 9 . 61 X1019/ cm3, respectively and those of N-type nc-Si : H thin films were 1 . 994 eV,1 . 93 S / cm, 1 . 694 cm2/ ( V·S) and 7 . 113 X1018/ cm3, respectively. Nanocrystalline grain size was approximate 3 ~5 nm and crystal volume fraction was within 35 % ~ 45 % . The grain deposition was density and it had more uniform size. The analogue tandem solar cells with the structure of Al / AZO / p-nc-Si : H / i-nc-Si : H / n-nc-Si : H / p-nc-Si : H / i-nc-Si : H / n-c-Si / Al were prepared in an area of 20 mmX20 mm and achieved the maximum open-circuit voltage VOC, short-circuit current ISC and fill factor of 544 . 3 mV, 85 . 6 mA and 65 . 7 % , respectively. |
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