李军利,刘卫国,周顺,蔡长龙.非晶硅薄膜的镍离子注入研究[J].表面技术,2013,42(2):98-100.
LI Jun-li,LIU Wei-guo,ZHOU Shun,CAI Chang-long.Study on Amorphous Silicon Film Doped by Ni Ion Implantation[J].Surface Technology,2013,42(2):98-100 |
| 非晶硅薄膜的镍离子注入研究 |
| Study on Amorphous Silicon Film Doped by Ni Ion Implantation |
| 投稿时间：2012-12-03 修订日期：2013-01-10 |
| DOI： |
| 中文关键词: 非晶硅薄膜 离子注入 电学性质 |
| 英文关键词:amorphous silicon film ion implantation electrical properties |
| 基金项目: |
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| Author | Institution |
| LI Jun-li | Micro-optoelectronic Systems Lab, Xi忆an Technological University, Xi忆an 710032 , China |
| LIU Wei-guo | Micro-optoelectronic Systems Lab, Xi忆an Technological University, Xi忆an 710032 , China |
| ZHOU Shun | Micro-optoelectronic Systems Lab, Xi忆an Technological University, Xi忆an 710032 , China |
| CAI Chang-long | Micro-optoelectronic Systems Lab, Xi忆an Technological University, Xi忆an 710032 , China |
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| 中文摘要: |
| 为得到具有器件应用价值的非晶硅薄膜,首先采用等离子体增强化学气相沉积系统获得非晶硅薄膜,之后用离子注入设备对该薄膜进行镍离子注入掺杂。 用椭偏仪测试薄膜厚度,得知非晶硅薄膜厚度为 200nm,且沉积工艺稳定。 X 射线衍射仪测试表明,所沉积的薄膜属于完全非晶态。 用四探针薄膜电阻测试设备测试非晶硅薄膜的方块电阻,结果表明,当掺杂浓度为 2 . 5 X 1019个 / cm3,离子注入能量为 35 . 2 keV 时,掺杂后的非晶硅薄膜具有较好电学性质,TCR 约为-0 . 7% ,室温下的方块电阻为 992 kΩ / □。 |
| 英文摘要: |
| In order to get good amorphous silicon film applicable for devices, amorphous silicon ( α-Si: H) film was aquired by plasma enhanced chemical vapor deposition system ( PECVD) . Then the film was doped by Ni ion implantation. The thickness of the film was measured by spectroscopic ellipsometry, which was about 200 nm stably in the decided deposition parameters. XRD test shown that the film was completely amorphous. Square resistance of the doped film was tested by the four point probe test instrument finally. The result shows that, in Ni ion implantation parameters of 2 . 5 X1019个 / cm3and 35 . 2 keV, amorphous silicon film with good electronical property is acquired. And TCR of the film is about-0 . 7 % . And square resistance of the film is 992 kΩ / □ at room temperature. |
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