胡九龙,杭凌侠,周顺.PECVD 技术制备低折射率光学薄膜[J].表面技术,2013,42(2):95-97.
HU Jiu-long,HANG Ling-xia,ZHOU Shun.Preparation of Low Refractive Index Optical Thin Film by PECVD Technology[J].Surface Technology,2013,42(2):95-97 |
| PECVD 技术制备低折射率光学薄膜 |
| Preparation of Low Refractive Index Optical Thin Film by PECVD Technology |
| 投稿时间：2012-11-20 |
| DOI： |
| 中文关键词: 薄膜 PECVD 低折射率 SiOF |
| 英文关键词:coating PECVD low-index SiOF |
| 基金项目: |
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| Author | Institution |
| HU Jiu-long | Xi'an Technological University, Xi'an 710032 , China;Shaanxi Province Key Lab of Thin Film Technology and Optical Test Open, Xi'an 710032 , China |
| HANG Ling-xia | Xi'an Technological University, Xi'an 710032 , China;Shaanxi Province Key Lab of Thin Film Technology and Optical Test Open, Xi'an 710032 , China |
| ZHOU Shun | Xi'an Technological University, Xi'an 710032 , China;Shaanxi Province Key Lab of Thin Film Technology and Optical Test Open, Xi'an 710032 , China |
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| 中文摘要: |
| 采用等离子体增强化学气相沉积法在硅片上沉积含氟氧化硅薄膜,用椭偏仪测量薄膜的光学参数,研究了在固定抽速和真空度自动调节情况下 C2F6 气体流量的变化对薄膜折射率、消光系数、沉积速率的影响。 实验表明在温度 300 益 、射频功率 200 W、压力 20 Pa,SiH460 sccm,N2O440 sccm,C2F630 sccm 的工艺参数下沉积的薄膜在 550 nm 处折射率为 1 . 37 ,消光系数 4 X10-4,可作为光学减反膜的材料。 |
| 英文摘要: |
| The Fluorine-containing silicon oxide film was deposited on a silicon wafer by plasma enhanced chemical vapor deposition. The optical parameters of the coatings were measured by ellipsometer and the effect of C2F6gas flow rate on the refractive index , the extinction coefficient and the deposition rate of the coating was studied when the pumping speed was fixed or the degree of vacuum is fixed. Experiments show that at 550 nm the refractive index is 1 . 37 and the extinction coefficient is 4 X10-4in the case of temperature 300 益 , RF power 200 W, presure 20 Pa, SiH460 sccm, N2O 40 sccm,C2 F6 30 sccm. The low-index coating can be used as optical antireflection coating materials. |
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