王旭,张帆,朱合范,潘红良.温度及扩散时间对 CVD 法制备高硅钢的影响[J].表面技术,2013,42(1):85-87.
WANG Xu,ZHANG Fan,ZHU He-fan,PAN Hong-liang.Influence of Temperature and Diffusion Time on Manufacturing Procedure of High Silicon Steel by CVD Method[J].Surface Technology,2013,42(1):85-87
温度及扩散时间对 CVD 法制备高硅钢的影响
Influence of Temperature and Diffusion Time on Manufacturing Procedure of High Silicon Steel by CVD Method
投稿时间:2012-09-27  修订日期:2012-10-12
DOI:
中文关键词:  6 . 5% Si 高硅钢  CVD  温度  扩散时间
英文关键词:6 . 5 % silicon steel  CVD  temperature  diffusion time
基金项目:
作者单位
王旭 华东理工大学, 上海 200237 
张帆 萨省大学, 加拿大 萨斯卡通 S7 H2 Z4 
朱合范 华东理工大学, 上海 200237 
潘红良 华东理工大学, 上海 200237 
AuthorInstitution
WANG Xu East China University of Science and Technology, Shanghai 200237 , China 
ZHANG Fan University of Saskatchewan, Saskatoon S7 H2 Z4 , Canada 
ZHU He-fan East China University of Science and Technology, Shanghai 200237 , China 
PAN Hong-liang East China University of Science and Technology, Shanghai 200237 , China 
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中文摘要:
      采用 CVD 法制备 6 . 5% Si 高硅钢,介绍了具体的制备工艺过程,研究了温度对渗硅速率和试样质量减轻的影响,同时分析了扩散时间对高硅钢中硅分布的影响。 结果表明:在 CVD 反应过程中,反应温度高于1050 ℃ 将大大提高渗硅速率,但当温度大于 1200 ℃ 后,渗硅速率趋于稳定;渗硅后,试样会减轻、减薄,随着温度升高,试样质量减轻的速率逐渐增大,在 1200 ℃ 左右趋于稳定;扩散时间越长,硅分布越均匀,结合制备效率进行考虑,满足 Δw表-中/ b≤5 的时间为适宜的扩散时间。
英文摘要:
      6 . 5 % Si high silicon steel was manufactured by using CVD method and the process was introduced, the influence of temperature on the siliconizing rate and quality reducing rate, diffusion time on silicon distribution were investigated.Results as follows: the siliconizing rate will increase quickly when the temperature is higher than 1050 ℃ ,but the siliconizing rate will become steadily as the temperature up to 1200 ℃ ; The quality reducing rate will increase with the elevating of temperature and the rate will become steadily when the temperature is higher than 1200 ℃ ; The silicon will be well-distributed as the diffusion time is very sufficient, but it will be the highest efficient time when the Δw表-中/ b≤5 .
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