伊洪坤,王维仁.一种新型单过硫酸氢钾/ 磷酸微蚀体系在PCB 微蚀中的应用[J].表面技术,2012,(6):75-77,127.
YI Hong-kun,WANG Wei-ren.Study on the Application of New Potassium Monopersulfate and Phosphoric Acid Microetchant in PCB Industry[J].Surface Technology,2012,(6):75-77,127
一种新型单过硫酸氢钾/ 磷酸微蚀体系在PCB 微蚀中的应用
Study on the Application of New Potassium Monopersulfate and Phosphoric Acid Microetchant in PCB Industry
投稿时间:2012-09-13  修订日期:2012-12-20
DOI:
中文关键词:  单过硫酸氢钾  磷酸  稳定剂  微蚀刻
英文关键词:potassium monopersulfates  phosphoric acid  stabilizing agent  micro-etching
基金项目:
作者单位
伊洪坤 东莞市富默克化工有限公司, 东莞523000 
王维仁 东莞市仁吉电子材料有限公司, 东莞523000 
AuthorInstitution
YI Hong-kun Formochem Applied Material Co. , Ltd. , Dongguan, 523000 China 
WANG Wei-ren Dongguan Renji Material Co. , Ltd. , Dongguan, 523000 China 
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中文摘要:
      介绍了一种新型微蚀刻体系,其组分主要包括单过硫酸氢钾复合物、磷酸及稳定剂等,研究了温度、组分用量、铜含量等因素对蚀刻的影响。结果表明:温度对该蚀刻体系的影响较大,以37 ~43 ℃范围为宜;磷酸在稳定剂的存在下可维持槽液pH 值稳定,提高处理效果,其用量为1. 6% ~2% 时有利于蚀刻;单过硫酸氢钾复合物在50 ~100 g/ L 为宜,通过控制其用量可获得所需的蚀刻量;铜含量对蚀刻速率影响较大,当铜含量上升时,需不断添加微蚀液以维持一定蚀刻量。与传统蚀刻体系相比,该微蚀刻体系具有蚀刻量低、更容易控制、药液更稳定等特点,能更好地满足PCB 蚀刻的要求。
英文摘要:
      An advanced etching agent that contains Potassium Monopersulfate,phosphoric acid and stabilizing agent is introduced in this paper and the effect factors such as the temperature,concentration,copper content were studied during the etching process. The result indicates that the effect of the temperature on etching rate is great, and the optimum temperature is between 37 ℃~43 ℃, not too high or too low; the phosphoric acid between 1. 6% to 2% is more helpful for etching and stabilized the pH value,improved the effect of the treatment in the presence of the stabilizers; PPS content between 50 ~100 g/ L is appropriate and flexible to control the etching rate; with the increase of copper content, more microetch solution must be continually added in order to maintain the required etching rate due to it爷s great impact. This etching system is more controllable etching rate and more stable than traditional H2 SO4 / H2 O2 ,SPS/ H2 SO4 and Potassium Monopersulfate-sulfuric acid etching system to meet the request of increased roughness and low etching rate.
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