郭萍,孙凤梅,张渊,夏兵.多孔硅和硅纳米线的减反性能对比研究[J].表面技术,2012,(5):22-24.
GUO Ping,SUN Feng-mei,ZHANG Yuan,XIA Bing.Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires[J].Surface Technology,2012,(5):22-24 |
| 多孔硅和硅纳米线的减反性能对比研究 |
| Comparative Study on Anti-reflection Effect between Porous Silicon and Silicon Nanowires |
| 投稿时间：2012-05-18 修订日期：2012-10-20 |
| DOI： |
| 中文关键词: 多孔硅 硅纳米线 光伏电池 减反性能 |
| 英文关键词:porous silicon silicon nanowires photovoltaic cells anti-reflection effect |
| 基金项目:国家自然科学基金资助项目(31000164);南京信息职业技术学院基金课题(YKJ10-016) |
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| 中文摘要: |
| 基于单晶硅材料,通过阳极电化学腐蚀法制得多孔硅材料,通过湿化学刻蚀法制得硅纳米线材料,经过空气等离子体氧化处理后,采用扫描电子显微镜、傅里叶红外光谱仪对样品的化学组分以及表面微观结构进行了表征。最后对多孔硅和硅纳米线材料的减反效果进行对比,结果表明,硅纳米线具有更优越的减反效果。 |
| 英文摘要: |
| By anode electrochemical etching or wet chemical etching, porous silicon and silicon nanowires were prepared, respectively. After oxidation by air plasma, these two samples were characterized by scanning electron microscope, infrared spectrum. Finally, the antireflection effect of porous silicon and silicon nanowires were measured, which indicated silicon nanowires had better anti-reflection effect. |
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