徐芸芸,张韬,陈磊.高C轴取向纳米ZnO 薄膜的制备工艺研究[J].表面技术,2012,(5):11-13,29.
XU Yun-yun,ZHANG Tao,CHEN Lei.Study on Preparation Technique for Nano-ZnO Thin Films with Highly C-axis Orientation[J].Surface Technology,2012,(5):11-13,29 |
| 高C轴取向纳米ZnO 薄膜的制备工艺研究 |
| Study on Preparation Technique for Nano-ZnO Thin Films with Highly C-axis Orientation |
| 投稿时间：2012-04-20 修订日期：2012-10-20 |
| DOI： |
| 中文关键词: 纳米ZnO 薄膜 RF磁控溅射 退火 残余应力 |
| 英文关键词:nano-ZnO thin film RF magneto-sputtering annealing residual stress |
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| 中文摘要: |
| 采用射频磁控溅射工艺,用高纯ZnO 粉末制作靶材,在普通玻璃基片上制备高度C轴取向且残余应力低的纳米ZnO 薄膜,并分析其退火前后的组织和微结构。结果表明:在试验范围内,溅射态ZnO 薄膜的组织都均匀、致密,晶粒尺寸小于50nm,具有高度的C轴取向,但膜内有残余拉应力,混晶取向且结晶性差的ZnO薄膜的残余应力大;提高氧分压有利于薄膜C轴取向生长和提高晶化程度;在500 ℃保温2h退火,薄膜内残余应力显著降低,晶化程度提高,晶粒尺寸略有增加。 |
| 英文摘要: |
| The nanocrystalline ZnO films with highly C-axis orientation and low residual stress of were prepared on ordinary glass substrates with high purity ZnO powder as target. The structure and microstructure of the films before and after annealing were analyzed. The results indicate that except for those sputtered in pure argon atmosphere, the most of as sputtered films are homogeneous and dense, with highly c-axis orientated grains of sizes less than 50 nanometers, but there exists residual stress in the thin film, and it is longer in the ZnO thin films with multi-crystalline orientation and poor crystallization; The C-axis orientated growth of the grain and the degree of crystallization are improved by increasing of oxygen partial pressure; Annealing process is also effective on reducing the residual stress. It has been observed that the residual stress significantly decreases, and crystallization degree is improved, but grain size slightly increases when annealed up to 500 ℃ for 2 hours. |
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