邹逢,徐均琪,苏俊宏,马健波.激光预处理对BaF2 薄膜损伤性能的影响[J].表面技术,2012,(5):4-6,24.
ZOU Feng,XU Jun-qi,SU Jun-hong,MA Jian-bo.Influence of Laser-conditioning on Laser Induced Damage Capability of BaF2 Thin Films[J].Surface Technology,2012,(5):4-6,24 |
| 激光预处理对BaF2 薄膜损伤性能的影响 |
| Influence of Laser-conditioning on Laser Induced Damage Capability of BaF2 Thin Films |
| 投稿时间：2012-05-17 修订日期：2012-10-20 |
| DOI： |
| 中文关键词: 激光预处理 薄膜 BaF2 激光损伤阈值 |
| 英文关键词:laser-conditioning thin films BaF2 laser induced damage threshold |
| 基金项目:西安市科技创新支撑计划CXY1015(2);陕西省国际科技合作项目(2008KW-12);科技部国际合作项目(2007DFR70180) |
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| Author | Institution |
| ZOU Feng | School of Photoelectric Engineering, Xi'an Technological University, Xi'an 710032, China |
| XU Jun-qi | School of Photoelectric Engineering, Xi'an Technological University, Xi'an 710032, China |
| SU Jun-hong | School of Photoelectric Engineering, Xi'an Technological University, Xi'an 710032, China |
| MA Jian-bo | School of Photoelectric Engineering, Xi'an Technological University, Xi'an 710032, China |
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| 中文摘要: |
| 为了提高光学薄膜元件抗激光损伤的能力,除了寻找先进的镀膜方法及工艺外,还可采取后期处理,因为后期处理对激光损伤阈值(LIDT)也有重要影响。采用输出波长为1064nm 的调QNd:YAG激光器,对膜厚为λ/2(λ=1064nm)的单层BaF2 薄膜进行激光预处理,研究了其激光损伤特性。在光斑大小一定的条件下,改变能量密度和脉冲次数,分别研究了它们对薄膜阈值的影响,得出最佳处理参数:能量密度为9.9J/cm2,脉冲次数为3次。处理后的BaF2 薄膜,激光损伤阈值从未处理的16.5J/cm2 提高到了29.9J/cm2。 |
| 英文摘要: |
| In order to enhance the laser induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser induced damage threshold(LIDT)of thin films. Q switch Nd:YAG laser of the working wave length at 1064 nm, was used to post process on BaF2 single layers with thickness of λ/2(λ=1064 nm)deposited by electron beam evaporation, and the laser induced damage properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 9.9J/cm2 and pulse number is 3 times. The LIDT of post processed BaF2 films was improved from 16.5J/cm2 to 29.9 J/cm2. |
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