李明,宓一鸣,言智,季鑫.靶基距对柔性基底上脉冲激光沉积透明导电薄膜的影响[J].表面技术,2012,(4):55-59.
LI Ming,MI Yi-ming,YAN Zhi,JI Xin.The Effect of Target-substrate Distance on Transparent Conductive Films by Pulsed Laser Deposition on Flexible Substrates.Surface Technology,2012,(4):55-59.
靶基距对柔性基底上脉冲激光沉积透明导电薄膜的影响
The Effect of Target-substrate Distance on Transparent Conductive Films by Pulsed Laser Deposition on Flexible Substrates
投稿时间:2012-04-24  修订日期:2012-08-20
DOI:
中文关键词:  脉冲激光沉积  柔性基底  透明导电氧化物  掺锡氧化铟  铝掺杂氧化锌  铟掺杂氧化锌
英文关键词:pulsed laser deposition  flexible substrate  transparent conductive oxide  Sn:InO  Al:ZnO  In:ZnO
基金项目:上海工程技术大学研究生科研创新项目(A-2603-11-01K189);上海工程技术大学研究生科研创新能力培养专项资金(B-8909-11-03008)
作者单位
李明 上海工程技术大学材料工程学院,上海201620 
宓一鸣 上海工程技术大学基础教学学院,上海201620 
言智 上海工程技术大学材料工程学院,上海201620 
季鑫 上海工程技术大学基础教学学院,上海201620 
AuthorInstitution
LI Ming College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China 
MI Yi-ming College of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, China 
YAN Zhi College of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China 
JI Xin College of Fundamental Studies, Shanghai University of Engineering Science, Shanghai 201620, China 
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中文摘要:
      采用脉冲激光沉积法,控制靶基距分别为4,6,8cm,在聚乙烯对苯二甲酸酯基底上沉积铟锌氧化物、铟锡氧化物和铝掺杂氧化锌薄膜,研究了靶基距对薄膜电学、光学、形态和结构特性的影响。结果表明:采用6~8cm 靶基距制备的TCO 薄膜,在可见光范围内的光学透光率超过90%,电阻率约为5×10-4 Ω·cm;除了这些优良的电学和光学特性外,靶基距8cm 制备的薄膜均匀、光滑、附着好,且无裂缝或任何其它扩展的缺陷,适用于光电设备。
英文摘要:
      By pulsed laser deposition method, target-substrate distance were controlled with 4,6,8 cm respectively. Thin films of indium zinc oxide, indium tin oxide and aluminum doped ZnO were deposited on polyethylene terephthalate substrate, the effect of the film electrical, optical, morphological and structural characteristics on target-substrate distance was studied. The research results show that optical transmittance of TCO thin films deposited by 6~8 cm target-substrate distance is more than 90% in the visible range, the resistivity is about 5×10-4Ω·cm; In addition to these excellent electrical and the optical properties, the films deposited by 8 cm target-substrate distance is uniform, smooth, good attached, and no cracks or any other extended defects, applied in optoelectronic devices.
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