陈文革,张剑,熊斐,邵菲.磁控溅射法制备W-Cu薄膜的研究[J].表面技术,2012,(4):42-45.
CHEN Wen-ge,ZHANG Jian,XIONG Fei,SHAO Fe.Research on W-Cu Film by Magnetron Sputtering Technology[J].Surface Technology,2012,(4):42-45
磁控溅射法制备W-Cu薄膜的研究
Research on W-Cu Film by Magnetron Sputtering Technology
投稿时间:2012-04-14  修订日期:2012-08-20
DOI:
中文关键词:  W-Cu薄膜  磁控溅射  单靶  双靶
英文关键词:W-Cu film  magnetron sputtering  single-target  dual-target
基金项目:陕西省教育厅自然科学基金资助项目(11JK0813)
作者单位
陈文革 西安理工大学材料科学与工程学院,西安710048 
张剑 西安理工大学材料科学与工程学院,西安710048 
熊斐 西安理工大学材料科学与工程学院,西安710048 
邵菲 西安理工大学材料科学与工程学院,西安710048 
AuthorInstitution
CHEN Wen-ge School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China 
ZHANG Jian School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China 
XIONG Fei School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China 
SHAO Fe School of Materials Science and Engineering, Xi'an University of Technology, Xi'an 710048, China 
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中文摘要:
      采用W70Cu30单靶磁控溅射与纯W、纯Cu双靶磁控共溅两种工艺,在多种基材上制备W-Cu薄膜,分析了薄膜的宏观形貌和组织结构。分析结果表明:单靶磁控溅射时,控制靶电压520V,溅射电流0.8~1.2A,Ar气流量25mL/min(标准状态),可在玻璃基体上镀得W-Cu薄膜,但退火时如温度过高,会使W 和Cu两种元素原子偏聚加重;双靶磁控溅射时,控制Ar气流量20mL/min(标准状态),Cu靶电流0.7A,W 靶电流1.2A,溅射时间3600s,可在硅基和玻璃基上镀得W-Cu薄膜,但在石墨基体、陶瓷基体及45钢基体上的镀膜效果不理想。
英文摘要:
      W-Cu films were prepared on a variety of substrate by single target magnetron sputtering of W70Cu30 and pure W, pure Cu dual-target magnetron co-sputtering two processes.The results show that when use the single target magnetron sputtering, the control target voltage is 520 V, sputtering current is 0.8~1.2 A, the gas flow of Ar is 25mL/min(standard state), the W-Cu film can be plated on a glass substrate. The annealing temperature is too high can also increase W and Cu atom segregation. With dual-target magnetron co-sputtering, the control Ar gas flow rate is 20 mL/min(standard state), Cu target current is 0.7 A, W target current is 1.2 A, sputtering time is 3600 s, W-Cu thin films are plated on the silicon and glass substrates, but the result is not ideal in the coating on the graphite matrix, ce-ramic matrix, and 45 steel substrate.
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