王成磊,高原,卜根涛,申罡.工艺参数对等离子合成TiN层相结构的影响[J].表面技术,2010,39(2):47-49,60.
WANG Cheng-lei,GAO Yuan,BU Gen-tao,SHEN Gang.Effects of Process Parameters on the Phase Structure of TiN Layer by Plasma Synthesizing[J].Surface Technology,2010,39(2):47-49,60
工艺参数对等离子合成TiN层相结构的影响
Effects of Process Parameters on the Phase Structure of TiN Layer by Plasma Synthesizing
投稿时间:2009-12-01  修订日期:2010-04-10
DOI:
中文关键词:  双层辉光  择优取向  TiN薄膜  相结构
英文关键词:double glow  preferred orientation  TiN films  phase structure
基金项目:国家自然科学基金(50764002);信息材料广西重点实验室主任研究课题(桂科能0710908-06-Z);2009年广西研究生科研创新项目(2009105950805M37)
作者单位
王成磊 桂林电子科技大学,桂林541004 
高原 桂林电子科技大学,桂林541004 
卜根涛 桂林电子科技大学,桂林541004 
申罡 桂林电子科技大学,桂林541004 
AuthorInstitution
WANG Cheng-lei Guilin university of Electronic Technology, Guilin 541004, China 
GAO Yuan Guilin university of Electronic Technology, Guilin 541004, China 
BU Gen-tao Guilin university of Electronic Technology, Guilin 541004, China 
SHEN Gang Guilin university of Electronic Technology, Guilin 541004, China 
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中文摘要:
      采用双层辉光等离子渗金属技术,在碳钢表面进行反应合成TiN层,研究了各种工艺参数对合成TiN层相结构的影响。结果表明:当TiN层较薄时,表面能起控制作用,TiN层的生长显示出{100}取向生长趋势,使TiN层系统自由能较低;而当TiN层较厚时,应变能占主导因素,对TiN层生长起主要控制作用,使TiN层呈现出{111}择优取向,有利于TiN层系统自由能的降低。即TiN层随厚度增加,{111}择优取向生长越明显。
英文摘要:
      TiN layer was formed on the surface of plain carbon steel by double glow plasma surface alloying technique. Effects of process parameters on the phase structure of TiN layer by plasma synthesizing were studied. The results shows that: When the TiN layer thickness is small, the growth of TiN layer presents{100}oriented growth trend under the control of surface energy, so that the free energy is lower in TiN layer system; When the TiN layer thickness is larger, the strain energy is the dominant factor, plays a major control action in the growth of TiN layers, so that TiN layer presenting{111}preferred orientation, thatis conducive to TiN layer of the system free energy reduction.With the increase in the thickness of the TiN layer,{111}preferred orientation growth is more significant.
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