陈惠敏.等离子体浸没离子注入(PⅢ)在材料表面改性中的应用及发展[J].表面技术,2008,37(5):79-81.
CHEN Hui-min.Application and Development of Plasma Immersion Ion Implantation in the Material Surface Modification[J].Surface Technology,2008,37(5):79-81
等离子体浸没离子注入(PⅢ)在材料表面改性中的应用及发展
Application and Development of Plasma Immersion Ion Implantation in the Material Surface Modification
投稿时间:2008-06-30  修订日期:2008-10-10
DOI:
中文关键词:  常规束线离子注入  等离子体浸没离子注入  等离子鞘  表面改性
英文关键词:Conventional beam ion implantation  Plasma Immersion Ion Implantation  Ion-matrix sheath  Surface modification
基金项目:
作者单位
陈惠敏 上海工程技术大学,上海201260 
AuthorInstitution
CHEN Hui-min Shanghai University of Engineering Science, Shanghai 201620, China 
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中文摘要:
      等离子体浸没离子注入(PⅢ)是一种用于材料表面改性的新的离子注入技术。系统地分析和讨论了等离子体浸没离子注入技术的原理和特点:该技术直接将待处理材料浸没在等离子体中进行注入,保留了常规束线离子注入(CBⅡ)技术的主要特点,消除了常规束线离子注入所固有的视线限制,克服了保持剂量问题,使注入装置变得简单和价廉。综述了等离子体浸没离子注入技术在金属材料、半导体材料和高分子材料改性方面的应用,展示了等离子体浸没离子注入技术应用的发展前景。
英文摘要:
      Plasma immersion ion implantation is a new ion implantation technique for surface modification of materials. The principle and advantages of PIII were analyzed and discussed systematically. Untreated materials were placed directly in a plasma source chamber. It kept in conventional beam ion implantation ( CB II ) specialty, circumvents the line-of-sight restriction of conventional beam ion implantation, overcomes the retained did problem and made implantation devices simple and inexpensive. Its applications in surface modification of metallic materials, semiconductor materials and polymer materials were reviewed, the direction of its applications and development were indicated.
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