缪娟,张成光,符德学.ZnSe薄膜电沉积工艺条件的研究[J].表面技术,2008,37(4):45-48.
MIAO Juan,ZHANG Cheng-guang,FU De_xue.Study on Electodeposition Condition of ZnSe Thin Film[J].Surface Technology,2008,37(4):45-48 |
| ZnSe薄膜电沉积工艺条件的研究 |
| Study on Electodeposition Condition of ZnSe Thin Film |
| 投稿时间：2008-04-11 修订日期：2008-08-10 |
| DOI： |
| 中文关键词: 电沉积 ZnSe薄膜 工艺条件 |
| 英文关键词:Electodeposition ZnSe thin film Technological conditions |
| 基金项目:河南省自然科学基金资助项目(0511050200) |
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| 中文摘要: |
| 采用电沉积方法制备了ZnSe薄膜，研究了电沉积工艺参数，包括镀液的主盐离子浓度、配合剂浓度、pH值及电流密度等对膜层的影响。通过正交试验对上述各参数进行优化，以寻求最佳的工艺条件，得到最佳制备条件为：电流密度6. OmA/cm2，柠檬酸钠14. 71g，pH值3.5，2n2 +/Se03 2-一浓度比200:1，温度65℃，时间8min。在此条件下制备了薄膜样品，并用扫描电镜、EDAX能谱仪对镀层进行了表征，其结构均匀致密，Zn/Se化学计量比为1/1. 01。 |
| 英文摘要: |
| ZnSe thin film was prepared by electrodeposition. The effects of eletrodeposition parameters such as the concentrations of the main salts and complexing reagent, the pH value, and the electric current density on the electrodeposited ZnSe film were studied. The optimum electrodeposition conditions were investigated by orthogonal design. The obtained excellent prepared condition as follows: current density is 6. OmA/cm2 ; sodium citrat is 14.71g; pH value is 3.5; ratio of 2n2+/Se03 2- density is 200:1; temperature is 65℃ ; time is 8min. The ZnSe film was characterized by SEM and EDAX, the surface morphology of the films is homogeneous and compact, the stoichiometry ratio of ZnSe films is l: 1. 01. |
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