梅芳,弓满锋,李玲.溅射技术在SiC薄膜沉积中的应用和工艺研究进展[J].表面技术,2008,37(2):75-78.
MElfang,GONG Man-feng,LI Ling.Application and Technologic Progress of Sputtering for the SiC Coating[J].Surface Technology,2008,37(2):75-78
溅射技术在SiC薄膜沉积中的应用和工艺研究进展
Application and Technologic Progress of Sputtering for the SiC Coating
投稿时间:2007-10-17  修订日期:2008-04-10
DOI:
中文关键词:  溅射技术  SiC薄膜  进展
英文关键词:Sputtering  SiC coating  Progress
基金项目:湛江师范学院重点科研项目( L0507)
作者单位
梅芳 湛江师范学院物理系,广东湛江524048 
弓满锋 1.湛江师范学院物理系,广东湛江524048;2.西北工业大学超高温结构复合材料国家重点实验室,陕西西安710072 
李玲 湛江师范学院物理系,广东湛江524048 
AuthorInstitution
MElfang Institute of Material Physics and Chemistry, Zhanjiang Normal College, Zhanjiang 524048, China 
GONG Man-feng 1. Institute of Material Physics and Chemistry, Zhanjiang Normal College, Zhanjiang 524048, China;2. National Key Laboratory of Thermostructure Composite Materials,Northwestem Polytechnical University, Xian 710072, China 
LI Ling Institute of Material Physics and Chemistry, Zhanjiang Normal College, Zhanjiang 524048, China 
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中文摘要:
      近年来,国内外SiC薄膜材料制备工艺研究迅速发展,由此带来SiC薄膜性能方面的研究也获得长足的进步,新技术、新工艺、新性能不断涌现。溅射SiC技术相对于其它沉积技术(CVD、PIP等)有许多独特的优点:沉积温度低、结合性和致密性好、表面平整、硬度高、光电性能优异以及工艺安全环保等,因此越来越受到重视,且已经成为沉积高性能SiC薄膜的重要技术方法。主要论述了几种不同溅射技术,着重介绍了溅射技术在SiC薄膜制备中的研究进展及SiC薄膜性能方面的研究进展和应用,并且展望了溅射技术制备SiC薄膜的发展前景和当前热点研究领域。
英文摘要:
      In recent years, the deposited technologies of SiC coatings have made great progress, which makes great development for the study of the property of SiC coatings , the new technology and the new property emerge continually. Comparing with the other technologies ( CVD and PIP) , the sputtering technology has many profits : the low deposited temperature, high adhesive strength and compaction, smooth surface, enhanced hardness, enhanced optics and electrics characteristic and soft-environmental, so it has been focused on depositing the SiC coatings more and more. The theory and deposited technology about several sputtering technologies were discussed; the sputtering-technologic progress, characteristic and application of SiC coatings were emphasized; and the developing foreground and the hotspots about the sputtering SiC coating were expected.
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