农尚斌,喻利花,许俊华.Ti-Si-N复合膜的微结构及性能研究[J].表面技术,2008,37(2):45-49.
NONG Shang-bin,YU Li-hua,XU Jun-hua.Microstructure and Properties of Ti-Si-N Nano-composites Deposited by Magnetron Sputtering[J].Surface Technology,2008,37(2):45-49
Ti-Si-N复合膜的微结构及性能研究
Microstructure and Properties of Ti-Si-N Nano-composites Deposited by Magnetron Sputtering
投稿时间:2007-11-22  修订日期:2008-04-10
DOI:
中文关键词:  磁控溅射  Ti-Si-N复合膜  微结构  性能
英文关键词:Magnetron sputtering  Ti-Si-N films  Microstructure  Properties
基金项目:国家自然科学基金资助项目(50574044)
作者单位
农尚斌 江苏科技大学材料科学与工程学院先进焊接技术重点实验室,江苏镇江212003 
喻利花 江苏科技大学材料科学与工程学院先进焊接技术重点实验室,江苏镇江212003 
许俊华 江苏科技大学材料科学与工程学院先进焊接技术重点实验室,江苏镇江212003 
AuthorInstitution
NONG Shang-bin Key Lab. of Advanced Welding Technology, School of Materials Science and Engineering,Jiangsu University of Science and Technology, Zhenjiang 212003 , China 
YU Li-hua Key Lab. of Advanced Welding Technology, School of Materials Science and Engineering,Jiangsu University of Science and Technology, Zhenjiang 212003 , China 
XU Jun-hua Key Lab. of Advanced Welding Technology, School of Materials Science and Engineering,Jiangsu University of Science and Technology, Zhenjiang 212003 , China 
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中文摘要:
      为研究Si的加入及含量对薄膜结构和性能的影响,采用磁控反应溅射法制备了一系列不同Si含量的Ti-Si-N复合膜,采用XRD、微力学探针和SEM研究了薄膜的微结构、力学性能和抗氧化性。结果表明:随着Si含量的增加,薄膜晶粒尺寸减小,硬度升高,抗氧化性能提高。Si含量为4% - 12%(原子数分数)时,晶粒尺寸随含量增加而急剧下降;当Si含量超过g%时,薄膜硬度处于峰值区;Si含量在7%以上时,薄膜具有较高的抗氧化能力。探讨了Ti-Si-N复合膜硬度升高和抗氧化能力提高的机理。
英文摘要:
      A series of Ti-Si-N nano-composite thin films with different silicon content have been deposited by multi-target reactive magnetron sputtering in order to investigate the influence of silicon content on the microstructure and properties of thin films. The microstructure, mechanical properties and high temperature properties were studied with XRD, SEM and nanoindentation. The results show that it leads to grain refinement, hardness enhancement and improve- ment of high temperature properties as the Si content increases. The grain size decreases sharply as the silicon content increases at a silicon content of around 40-/o ~ 120-/o . The hardness remains at a high level at a Si content of 9% and above. The films show a high oxidation resistance at Si content of 7% and above. The mechanisms of hardness enhancement and improvement of oxidation resistance have been discussed.
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