陈迪春,蒋百灵,吴文文,李洪涛.镁合金表面磁控溅射CrAITiN镀层的制备技术研究[J].表面技术,2008,37(2):8-10.
CHEN Di-chun,JIANG Bai-Iing,WU Wen-wen,LI Hong-tao.Study on Preparation Technique of CrAITiN Coatings on Magnesium Alloy by Magnetron Sputtering[J].Surface Technology,2008,37(2):8-10
镁合金表面磁控溅射CrAITiN镀层的制备技术研究
Study on Preparation Technique of CrAITiN Coatings on Magnesium Alloy by Magnetron Sputtering
投稿时间:2007-11-22  修订日期:2008-04-10
DOI:
中文关键词:  镁合金  磁控溅射  偏压  CrAITiN镀层
英文关键词:Magnesium alloy  Magnetron Sputtering  Bias  CrAITiN coatings
基金项目:国家863计划项目(2005AA33HOIO)
作者单位
陈迪春 西安理工大学材料科学与工程学院,陕西西安710048 
蒋百灵 西安理工大学材料科学与工程学院,陕西西安710048 
吴文文 西安理工大学材料科学与工程学院,陕西西安710048 
李洪涛 西安理工大学材料科学与工程学院,陕西西安710048 
AuthorInstitution
CHEN Di-chun School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 , China 
JIANG Bai-Iing School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 , China 
WU Wen-wen School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 , China 
LI Hong-tao School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 , China 
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中文摘要:
      使用闭合场非平衡磁控溅射离子镀技术,通过改变偏压在镁合金表面制备了CrAITiN镀层,对镀层厚度、硬度、结合力和耐磨性进行了检测,使用SEM和XRD分析了镀层的形貌和相组成,结果表明:通过改变偏压可以在镁合金表面沉积一层具有一定耐磨性能的CrAITiN镀层;偏压对镁基CrAITiN镀层的结合力和耐磨性影响很大,在偏压为35V时具有最好的结合力和耐磨性能,随着偏压的增大,镀层硬度提高,致密性增强,厚度降低;镁基CrAITiN镀层为柱状晶组织,具有面心立方结构,点阵类型与面心立方CrN相同。
英文摘要:
      Using closed field unbalanced magnetron sputtering Ion plating, the CrAITiN coatings were deposited on the magnesium alloy through changing bias. The thickness, hardness, adhesion and wear-resistance of coatings were tested, the morphologies and phase composition of coatings were investigated by SEM and XRD . The results showed that the CrAITiN coatings can be deposited on the magnesium alloy by changing the bias. The hardness and compactness of coatings are improved with the increase of bias. The coatings have the best adhesion and wear-resistance while bias at 35V. The microstructure of CrAITiN corresponds to that of fcc CrN.
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