刘思用,林立,杨武保,孙惠峰.AIN薄膜的离子反应镀工艺优化及分析[J].表面技术,2007,36(3):37-39.
LIU Si-yong,LIN Li,YANG Wu-bao,SUN Hui-feng.Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis[J].Surface Technology,2007,36(3):37-39
AIN薄膜的离子反应镀工艺优化及分析
Technology Optimization of Reactive Ion Plating for AIN Film and Its Analysis
投稿时间:2007-03-05  修订日期:2007-06-10
DOI:
中文关键词:  氮化铝  薄膜  离子反应镀  工艺优化
英文关键词:AIN  Film  Reactive ion plating  Technology optimization
基金项目:
作者单位
刘思用 中国石油大学(北京)机电工程学院材料系,北京102249 
林立 中国石油大学(北京)机电工程学院材料系,北京102249 
杨武保 中国石油大学(北京)机电工程学院材料系,北京102249 
孙惠峰 中国石油大学(北京)机电工程学院材料系,北京102249 
AuthorInstitution
LIU Si-yong Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China 
LIN Li Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China 
YANG Wu-bao Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China 
SUN Hui-feng Material Department of Electromechanical and Engineering College ,China University of Petroleum( Beijing) , Beijing 102249 , China 
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中文摘要:
      利用高纯氮气和铝,采用离子反应镀的方法,在石英玻璃衬底上成功制得AIN薄膜。正交设计优化结果表明:AIN薄膜最大沉积速率达到0. 81斗m/min,其相应的工艺参数为:蒸发电压225V,轰击电压70V,轰击时N2气压为1. 5999Pa。X-射线衍射、原子力显微镜、近红外光谱、拉曼光谱对薄膜进行了分析,证明了AIN薄膜的存在。
英文摘要:
      AIN film was produced on glass with high-pure N2 and Al by reactive ion plating. The result of orthogonal design indicates that the largest deposited speed is about 0. 8lym/min , its technology parameters are like this : the evaporating voltage is 225V, the bombarding voltage is 70V, the vacuum degree is l. 2 x 10-2torr. The film was analyzed by XRD, AFM, near infrared spectrum, and Raman spectrum, which ensured the AIN films presence.
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