樊丽梅,文九巴,赵胜利,祝要民.化学蚀刻单晶硅及其表面形貌研究[J].表面技术,2007,36(1):19-21.
FAN Li-mei,WEN Jiu-ba,ZHAO Sheng-li,ZHU Yao-min.Chemical Etching on Single-crystalline Silicon Slice and its Surface Morphology[J].Surface Technology,2007,36(1):19-21 |
| 化学蚀刻单晶硅及其表面形貌研究 |
| Chemical Etching on Single-crystalline Silicon Slice and its Surface Morphology |
| 投稿时间：2006-10-13 修订日期：2007-02-10 |
| DOI： |
| 中文关键词: 化学蚀刻 单晶硅片 表面形貌 |
| 英文关键词:Chemical etching Single-crystalline silicon slice Surface morphology |
| 基金项目:河南省教育厅自然科学计划项目(2006430005) |
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| Author | Institution |
| FAN Li-mei | School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China |
| WEN Jiu-ba | School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China |
| ZHAO Sheng-li | School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China |
| ZHU Yao-min | School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471003, China |
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| 中文摘要: |
| 采用酸碱两种不同的化学蚀刻液对单晶硅表面蚀刻，通过扫描电镜（SEM）对其形貌进行了表征，考察了蚀刻液浓度、蚀刻时间及温度对表面形貌的影响。结果表明，在HNO3+HF溶液中，20℃时用2.81MHF+18.81M HNO3反应5min或2.67M HF+17.85M HNO3反应15min制得了硅片表面腐蚀坑大小适中，分布均匀的多孔状表面。在KOH水溶液中，50℃时用33%的KOH水溶液中反应10min获得了表面积大，分布均匀的绒状表面。 |
| 英文摘要: |
| Acid-etching and alkali-etching methods are used to etch on single-crystalline silicon slice and the influence of temperature, time and solution concentration on the surface morphology is explored. The results show that at 20℃ the porosites etched by 2.81MHF+18.81M HNO3 for 2 minutes, and 2.67M HF+17.85M HNO3 for 15 minutes are well-proportioned. The textures obtained at 50℃ by 33% KOH with reaction for10 minutes have good surface morphology. |
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